Material-abrading lapping or machining tool especially for processing semiconductor wafers, has working surface divided into surface elements by mutually crossing grooves
DK200300095A
Method and apparatus for producing single crystal of semi-conductor material involve portions of molten mass which are maintained liquid by tractive spool
US2003113488A1
Device for holding a molten semiconductor material
DE10254447A1
Arrangement for pulling single crystals according to the Czochraski method or by zone pulling comprises a cylindrical seed crystal and a crystal container for receiving and holding the seed crystal
DE10250824A1
Device for picking up a melt from semiconductor material
DE10247200A1
Process for simultaneously removing material on both sides of one or more semiconductor wafers comprises using a plate which has chemically inert abrasion- and adhesion-resistant coating in partial regions on the front and rear sides
DE10247201A1
Production of boron-doped silicon wafer, used as substrate for electronic element, e.g. processor or memory element, includes polishing with aqueous alkaline polish containing silica and alkali metal or ammonium polyaminocarboxylate
DE10247202A1
Production of a boron-doped silicon wafer comprises cutting a boron-doped silicon crystal into wafers, mechanically shaping, wet chemical etching, and polishing by continuously introducing a silicic acid-containing aqueous polishing agent
DE10241147A1
Process for calibrating the temperature measuring system of an epitaxy reactor involves using the temperature in the process chamber of the reactor during deposition of an epitaxial layer on a substrate
DE10239775B3
Production of a silicon wafer used in the production of a semiconductor component comprises treating the cleaned wafer with an aqueous ozone solution, coating with polycrystalline silicon, finely grinding, and epitaxially growing the wafer
DE10239774A1
Method and apparatus for attaching polishing cloths to the plates of a polishing machine such as for polishing silicon wafers using grooves or ridges to control application of a vacuum
DE10239773B3
Cleaning a semiconductor wafer comprises treating the wafer under megasound with an aqueous solution containing ozone, and treating the wafer with an aqueous solution containing hydrofluoric acid and hydrochloric acid
DE10238593A1
Production of a semiconductor wafer from a semiconducting workpiece comprises subjecting a conducting tool as electrode to an electrical current from a direct voltage source, and applying to the workpiece in the presence of an electrolyte
DE10232667A1
Wire saw and process for separating discs from a workpiece such as a semiconductor has tension equalizer for wires having cutting particles
DE10232670A1
Method and device for cleaning lapping disks
DE10223937A1
Process for fixing and dissolving a sawing aid on a silicon single crystal rod comprises using a layer compound for connecting the single crystal rod to the sawing aid
DE10220640A1
Method for removing slices from workpiece by wire saw involves aligning wire controlled in grooves between two wire guide rollers to prevent damage
DE10220639A1
Method for controlling rotation of a semiconductor disk during high temperature treatment measures the temperature of the disk with a pyrometer as a function of time
DE10220638A1
Method an apparatus for separating slices from a brittle workpiece using a wire saw where the cutter is cleaned during the cutting process by ultrasound
DE10218491B3
Process for avoiding the spontaneous combustion of combustible dusts in process exhaust gases, device for carrying out the process and silicon wafer available from this process
