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MITSUBISHI MATERIAL SILICON

Overview
  • Total Patents
    740
About

MITSUBISHI MATERIAL SILICON has a total of 740 patent applications. Its first patent ever was published in 1989. It filed its patents most often in Japan, United States and Germany. Its main competitors in its focus markets surface technology and coating, machines and semiconductors are MEMC ELECTRONICS MATERIALS INC, FREIBERGER COMPOUND MAT GMBH and MEMC ELECTRONIC MATERIALS.

Patent filings per year

Chart showing MITSUBISHI MATERIAL SILICONs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Furuya Hisashi 92
#2 Atami Takashi 64
#3 Morita Etsuro 52
#4 Oi Hiroyuki 49
#5 Takaishi Kazunari 48
#6 Kida Michio 47
#7 Taguchi Hiroaki 41
#8 Hori Kenji 37
#9 Shiraki Hiroyuki 31
#10 Yamaoka Tomonori 29

Latest patents

Publication Filing date Title
US6818197B2 Epitaxial wafer
US2003124853A1 Anisotropic etching method and apparatus
US6682597B2 Silicon wafer, and heat treatment method of the same and the heat-treated silicon wafer
JP2003078140A Semiconductor substrate and method for manufacturing the same, field effect transistor and method for manufacturing the same
JP2003065268A Water-sealed type vacuum pump of inert gas exhaust system for monocrystal pulling machine
JP2003055684A Powder composition for water-soluble processing fluid, water-soluble processing fluid using the same and processing slurry
JP2003046100A Semiconductor substrate having iron silicide layer and optical semiconductor device, and method of manufacturing them
JP2003023146A SEMICONDUCTOR SUBSTRATE, FIELD EFFECT TRANSISTOR, FORMING METHOD OF SiGe LAYER AND FORMING METHOD OF DISTORTED Si LAYER USING THE SAME, AND MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR
JP2003022970A METHOD OF FORMING SEMICONDUCTOR SUBSTRATE, FIELD TRANSISTOR, AND SiGe LAYER, AND METHOD OF FORMING DISTORTED Si LAYER AND METHOD OF MANUFACTURING FIELD EFFECT TRANSISTOR UTILIZING THE FORMING METHOD
JP2003017671A Semiconductor substrate and field effect transistor, and manufacturing method therefor
JP2003017670A Semiconductor substrate and field effect transistor, and manufacturing method therefor
JP2003007615A Semiconductor substrate, field effect transistor and their manufacturing methods
JP2003008022A Semiconductor substrate and field effect transistor, and manufacturing method thereof
JP2003004406A Apparatus for measuring linearity of orientation flat of wafer
JP2002359190A SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR, METHOD FOR FORMING SiGe LAYER, METHOD FOR FORMING STRAINED Si LAYER USING IT AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP2002359188A METHOD FOR FORMING STRAINED Si LAYER, METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR, SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR
JP2002118254A SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR AND FORMING METHOD OF SiGe LAYER, FORMING METHOD OF DISTORTED Si LAYER USING THIS FORMING METHOD AND MANUFACTURING METHOD OF FIELD-EFFECT TRANSISTOR
JP2002359189A SEMICONDUCTOR SUBSTRATE AND FIELD EFFECT TRANSISTOR, METHOD FOR FORMING SiGe LAYER, METHOD FOR FORMING STRAINED Si LAYER USING IT AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP2002356399A Semiconductor substrate, field effect transistor, method for forming silicon-germanium layer, method for forming strained silicon layer using the method and method for manufacturing field effect transistor
JP2002359201A SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, METHOD OF FORMING SiGe LAYER, METHOD OF FORMING STRAINED Si LAYER USING THE SAME, AND METHOD OF MANUFACTURING THE FIELD- EFFECT TRANSISTOR