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GRINM SEMICONDUCTOR MATERIALS

Overview
  • Total Patents
    122
  • GoodIP Patent Rank
    16,965
  • Filing trend
    ⇩ 16.0%
About

GRINM SEMICONDUCTOR MATERIALS has a total of 122 patent applications. It decreased the IP activity by 16.0%. Its first patent ever was published in 2007. It filed its patents most often in China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, surface technology and coating and machine tools are XIAN ESWIN SILICON WAFER TECH CO LTD, BEIJING TONGMEI XTAL TECH CO LTD and LG SILTRON INC.

Patent filings in countries

World map showing GRINM SEMICONDUCTOR MATERIALSs patent filings in countries

Patent filings per year

Chart showing GRINM SEMICONDUCTOR MATERIALSs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Yan Zhirui 34
#2 Ku Liming 27
#3 Zhu Qinfa 20
#4 Jiang Jian 18
#5 Wang Yongtao 18
#6 Cui Bin 18
#7 Sheng Fangyu 17
#8 Xu Jiping 17
#9 Feng Quanlin 17
#10 Li Zongfeng 17

Latest patents

Publication Filing date Title
CN112059736A Silicon wafer manufacturing process
CN112048761A Large-diameter monocrystalline silicon shouldering growth process
CN112086342A Process method for effectively removing back sealing points on back surface of back sealing silicon wafer
CN111986984A Method for reducing time mist generated on surface of silicon polished wafer
CN111364098A Doping device for heavily-doped Czochralski single crystal
CN111347061A Process method for processing silicon ring
CN111354634A Silicon ring processing technology
CN111349965A Device and method for preventing heater from being damaged by collision of graphite crucible bottom during taking and loading of single crystal furnace
CN111334851A Polysilicon material recharging method
CN111321465A Quartz dispersion tube connecting device and method used in silicon-based polycrystalline silicon film growth process
CN111321459A Device and method for preventing glass of pyrometer light-taking hole of monocrystalline silicon growth furnace from being contaminated
CN111318961A Method for processing silicon ring
CN111318964A Processing method for prolonging service life of polishing cloth
CN111270300A Preparation method of gas-phase doped zone-melting silicon single crystal
CN111251163A Processing method for polished silicon wafer with hydrophilic surface
CN111261542A Device and method for removing wafer surface damage through alkaline corrosion
CN111261495A Cleaning and drying process for polished silicon wafer
CN111261496A Acid corrosion processing method of large-diameter substrate wafer suitable for single-side polishing
CN110938863A Method for replacing dispersion pipe in LPCVD furnace body in high-temperature state
CN109957833A A kind of device for preventing monocrystalline and falling