SILANNA SEMICONDUCTOR USA INC has a total of 39 patent applications. Its first patent ever was published in 2010. It filed its patents most often in United States, Taiwan and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and electrical machinery and energy are PRIEWASSER KARL HEINZ, INVENSAS BONDING TECHNOLOGIES INC and CHINA WAFER LEVEL CSP LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 11 | |
#2 | Taiwan | 8 | |
#3 | WIPO (World Intellectual Property Organization) | 8 | |
#4 | China | 7 | |
#5 | EPO (European Patent Office) | 4 | |
#6 | Japan | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Micro-structure and nano-technology | |
#3 | Electrical machinery and energy | |
#4 | Basic communication technologies | |
#5 | Control |
# | Name | Total Patents |
---|---|---|
#1 | Stuber Michael A | 18 |
#2 | Molin Stuart B | 16 |
#3 | Nygaard Paul A | 11 |
#4 | Fanelli Stephen A | 9 |
#5 | Lou Perry | 4 |
#6 | Kemerling Clint | 3 |
#7 | Brindle Chris | 2 |
#8 | Molin Stuart | 2 |
#9 | Perry Lou | 2 |
#10 | Stuber Michael | 2 |
Publication | Filing date | Title |
---|---|---|
US9177968B1 | Schottky clamped radio frequency switch | |
US2016043108A1 | Semiconductor Structure with Multiple Active Layers in an SOI Wafer | |
US9105689B1 | Bonded semiconductor structure with SiGeC layer as etch stop | |
CN104769715A | Power device integration on a common substrate | |
US2014009136A1 | Charge pump regulator circuit with variable amplitude control | |
US2014354342A1 | Compact level shifter | |
US2013221433A1 | Double-sided vertical semiconductor device with thinned substrate | |
TW201119015A | Integrated circuit and method of fabricating the same | |
TW201123435A | Semiconductor-on-insulator structure, method of removing unwanted accumulated majority-type carriers from the channel of a semiconductor-on-insulator active device, and method of fabricatiing an integrated circuit |