Learn more

DORIS BRUCE B

Overview
  • Total Patents
    40
About

DORIS BRUCE B has a total of 40 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and machines are CHINA WAFER LEVEL CSP LTD, X FAB UK LTD and WEI ANDY.

Patent filings in countries

World map showing DORIS BRUCE Bs patent filings in countries

Patent filings per year

Chart showing DORIS BRUCE Bs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Doris Bruce B 40
#2 Cheng Kangguo 23
#3 Khakifirooz Ali 19
#4 Kulkarni Pranita 15
#5 Shahidi Ghavam G 9
#6 Narayanan Vijay 6
#7 Cartier Eduard Albert 5
#8 Radens Carl J 4
#9 Ponoth Shom 4
#10 Paruchuri Vamsi 4

Latest patents

Publication Filing date Title
US8586439B1 Inversion mode varactor
US2013344677A1 Shallow trench isolation structures
US2013334651A1 Dual shallow trench isolation liner for preventing electrical shorts
US2013313643A1 Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs)
US2013299897A1 Inverted thin channel mosfet with self-aligned expanded source/drain
US2013049132A1 Parasitic capacitance reduction in MOSFET by airgap ild
US2012256277A1 Semiconductor device exhibiting reduced parasitics and method for making same
US2012049284A1 Same-chip multicharacteristic semiconductor structures
US2012043623A1 Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device
US2012025282A1 Raised source/drain field effect transistor
US2012025288A1 SOI trench DRAM structure with backside strap
US2011309446A1 Strained thin body CMOS device having vertically raised source/drain stressors with single spacer
US2011254015A1 Method for improving device performance using epitaxially grown silicon carbon (SiC) or silicon-germanium (SiGe)
US2011254080A1 Tunnel field effect transistor
US2011221003A1 MOSFETs with reduced contact resistance
US2010203732A1 Fin and finFET formation by angled ion implantation
US2012132966A1 Semiconductor structures having improved contact resistance
US2009093133A1 Self-assembled sidewall spacer
US2009039436A1 High Performance Metal Gate CMOS with High-K Gate Dielectric
US2008277726A1 Devices with Metal Gate, High-k Dielectric, and Butted Electrodes