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ICEMOS TECHNOLOGY LTD

Overview
  • Total Patents
    34
  • GoodIP Patent Rank
    201,166
About

ICEMOS TECHNOLOGY LTD has a total of 34 patent applications. Its first patent ever was published in 2006. It filed its patents most often in United States, China and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and environmental technology are ICEMOS TECHNOLOGY CORP, XIN TECH INC and VISWANADAM GAUTHAM.

Patent filings in countries

World map showing ICEMOS TECHNOLOGY LTDs patent filings in countries

Patent filings per year

Chart showing ICEMOS TECHNOLOGY LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Griffin Hugh J 22
#2 Wilson Robin 20
#3 Macnamara Cormac 19
#4 Brogan Conor 16
#5 Ishiguro Takeshi 10
#6 Sugiura Kenji 7
#7 Anderson Samuel 4
#8 Cheng Xu 2
#9 Kenji Sugiura 1
#10 Griffin Hiugh J 1

Latest patents

Publication Filing date Title
US2014264620A1 Stripe orientation for trenches and contact windows
US2014264582A1 800 V superjunction device
US2013299900A1 Superjunction devices having narrow surface layout of terminal structures, buried contact regions and trench gates
JP2011044717A Direct wafer-bonded through-hole photodiode
US2010065946A1 Method of fabricating a bonded wafer substrate for use in MEMS structures
US2009200547A1 Trench depth monitor for semiconductor manufacturing
US2009200634A1 Multi-angle rotation for ion implantation of trenches in superjunction devices
CN101510557A Superjunction device having a dielectric termination and methods for manufacturing the device
US2008258226A1 Methods for manufacturing a trench type semiconductor device having a thermally sensitive refill material
US2008036015A1 Semiconductor devices with sealed, unlined trenches and methods of forming same
US2007138588A1 Backlit photodiode and method of manufacturing a backlit photodiode
US2007111356A1 Front lit PIN/NIP diode having a continuous anode/cathode
US2007085117A1 Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
US2007077725A1 Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode