|
US2015371827A1
|
|
Bias voltage frequency controlled angular ion distribution in plasma processing
|
|
US2014038393A1
|
|
Method and system for ion-assisted processing
|
|
US2014027274A1
|
|
Three dimensional metal deposition technique
|
|
US2012295444A1
|
|
Techniques for forming 3D structures
|
|
US2012288637A1
|
|
Methods of affecting material properties and applications therefor
|
|
US2012289030A1
|
|
Ion-assisted direct growth of porous materials
|
|
US2012286285A1
|
|
Method of implanting a workpiece to improve growth of a compound semiconductor
|
|
US2012258583A1
|
|
Method for epitaxial layer overgrowth
|
|
US2012276658A1
|
|
Method of etching a workpiece
|
|
US2013062309A1
|
|
Method and system for modifying resist openings using multiple angled ions
|
|
US2012258600A1
|
|
Method and system for post-etch treatment of patterned substrate features
|
|
US2011223546A1
|
|
Method and system for modifying substrate relief features using ion implantation
|
|
US2012175518A1
|
|
Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
|
|
WO2011047142A2
|
|
A technique for processing a substrate having a non-planar surface
|
|
US2012082942A1
|
|
Method and system for modifying photoresist using electromagnetic radiation and ion implantation
|
|
US8133804B1
|
|
Method and system for modifying patterned photoresist using multi-step ion implantation
|
|
US2011186749A1
|
|
Ion source
|
|
US2011253902A1
|
|
Method to generate molecular ions from ions with a smaller atomic mass
|
|
US2010252531A1
|
|
Enhanced etch and deposition profile control using plasma sheath engineering
|
|
US2010255665A1
|
|
Plasma processing apparatus
|
