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TEL EPION INC

Overview
  • Total Patents
    165
  • GoodIP Patent Rank
    29,600
About

TEL EPION INC has a total of 165 patent applications. Its first patent ever was published in 2000. It filed its patents most often in United States, Taiwan and WIPO (World Intellectual Property Organization). Its main competitors in its focus markets electrical machinery and energy, semiconductors and surface technology and coating are SOSUL CO LTD, GODET LUDOVIC and HONDA MASANOBU.

Patent filings per year

Chart showing TEL EPION INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Hautala John J 60
#2 Russell Noel 47
#3 Gwinn Matthew C 37
#4 Tabat Martin D 27
#5 Graf Michael 24
#6 Becker Robert K 20
#7 Freytsis Avrum 18
#8 Larose Joshua 17
#9 Leith Allen J 15
#10 Shao Yan 13

Latest patents

Publication Filing date Title
WO2018129379A1 Compensated location specific processing apparatus and method
KR20180043375A Method for high throughput using beam scan size and beam position in beam processing system
WO2017035030A1 Hybrid corrective processing system and method
US2016322266A1 Method of surface profile correction using gas cluster ion beam
SG11201702566RA Process gas enhancement for beam treatment of a substrate
KR20170041806A Gcib nozzle assembly
US2015270135A1 Gas cluster ion beam etching process
US2015332924A1 Method and apparatus for beam deflection in a gas cluster ion beam system
US2016222521A1 Sidewall spacer patterning method using gas cluster ion beam
TW201537607A Method for treating a substrate using a charged particle beam
WO2015077604A1 Molecular beam enhanced gcib treatment
US2015137006A1 Multi-step location specific process for substrate edge profile correction for GCIB system
US2015243476A1 Apparatus and methods for implementing predicted systematic error correction in location specific processing
US2014332696A1 Low contamination scanner for GCIB system
US2015056815A1 GCIB etching method for adjusting fin height of finFET devices
US2013330845A1 Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
JP2013055336A Gas cluster ion beam etching process for achieving target etch process characteristics for composite materials
TW201201240A "processing system for irradiating substrate with gas cluster ion beam and method of supplying gas in the same"
KR20110053916A Method to alter silicide properties using gcib treatment
US2011240602A1 High-voltage gas cluster ion beam (gcib) processing system