SILICONIX TECHNOLOGY C V has a total of 26 patent applications. Its first patent ever was published in 2000. It filed its patents most often in United States, EPO (European Patent Office) and China. Its main competitors in its focus markets semiconductors, electrical machinery and energy and optics are CHEN HSIEN-WEI, DAUBENSPECK TIMOTHY H and J-DEVICES CORP.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 11 | |
#2 | EPO (European Patent Office) | 7 | |
#3 | China | 2 | |
#4 | Germany | 2 | |
#5 | Taiwan | 2 | |
#6 | Hong Kong | 1 | |
#7 | Republic of Korea | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Electrical machinery and energy | |
#3 | Optics | |
#4 | Audio-visual technology | |
#5 | Machines | |
#6 | Transport |
# | Name | Total Patents |
---|---|---|
#1 | Carta Rossano | 9 |
#2 | Merlin Luigi | 7 |
#3 | Bellemo Laura | 6 |
#4 | Kinzer Daniel M | 6 |
#5 | Richieri Giovanni | 4 |
#6 | Sridevan Srikant | 2 |
#7 | Rachmann Klaus | 2 |
#8 | Thor Volker | 2 |
#9 | Kienitz Stefan | 2 |
#10 | Vaysse Bertrand P | 1 |
Publication | Filing date | Title |
---|---|---|
US2007254452A1 | Mask structure for manufacture of trench type semiconductor device | |
US2007212862A1 | Process for forming Schottky rectifier with PtNi silicide Schottky barrier | |
US2007222025A1 | Termination for a superjunction device | |
US2007187750A1 | Superjunction power semiconductor device | |
EP1818983A2 | Three phase inverter power stage and assembly | |
US2007090481A1 | Silicon carbide Schottky diode | |
US2007007614A1 | Schottky diode with improved surge capability | |
US2006197105A1 | Power semiconductor switch | |
US2006086939A1 | Solderable top metal for SiC device |