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SHANGHAI ZHUOHONG MICROSYSTEM TECH CO LTD

Overview
  • Total Patents
    15
  • GoodIP Patent Rank
    113,434
  • Filing trend
    ⇩ 100.0%
About

SHANGHAI ZHUOHONG MICROSYSTEM TECH CO LTD has a total of 15 patent applications. It decreased the IP activity by 100.0%. Its first patent ever was published in 2017. It filed its patents most often in China. Its main competitors in its focus markets semiconductors and computer technology are BECKER SCOTT T, REBER DOUGLAS M and ZGLUE INC.

Patent filings in countries

World map showing SHANGHAI ZHUOHONG MICROSYSTEM TECH CO LTDs patent filings in countries
# Country Total Patents
#1 China 15

Patent filings per year

Chart showing SHANGHAI ZHUOHONG MICROSYSTEM TECH CO LTDs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Shen Li 14
#2 Lu Yu 13
#3 Zhou Runbao 12
#4 Cheng Yuhua 12
#5 Shen Jinlong 12

Latest patents

Publication Filing date Title
CN109980006A One kind having high-power high voltage device blocks structure
CN109977440A Parameterized module unit of transistors
CN109977439A A kind of automation placement-and-routing of multiple transistor modular unit testing structures
CN109979874A SOI device structure
CN109979887A It is a kind of to be suitable for the integrated high-power structure of high-low pressure encapsulation
CN109979893A It is a kind of for reducing the high voltage structures and its manufacturing method of self-heating effect
CN109975627A The method that testing high voltage environment influences standard cell lib
CN109979985A A kind of high power device modular structure improving breakdown voltage
CN109979912A The laminated inductor structure and its implementation that substrate is emptied
CN109980007A A kind of high-power buried structure improving laterally pressure resistance
CN109980008A CoolMOS structure
CN109979897A A kind of high voltage structures with intermediate buried layer
CN108666292A Composite packing structure
CN108630753A SOI high tension apparatus with stairstepping shielding trench pressure-resistance structure and dual-drain structure
CN108630709A Three buried layer SOI high-voltage device structures of double vertical windows