|
CN112164706A
|
|
Magnetic memory and manufacturing method thereof
|
|
CN111863061A
|
|
Magnetic random access memory and data read/write operation method thereof
|
|
CN111768807A
|
|
Word line power supply control circuit for magnetic random memory cell
|
|
CN110676288A
|
|
Magnetic tunnel junction structure and magnetic random access memory
|
|
CN112289923A
|
|
Magnetic tunnel junction structure of magnetic random access memory
|
|
CN112289353A
|
|
Optimized MRAM system with ECC function and operation method thereof
|
|
CN112289352A
|
|
MRAM system with ECC function and operation method thereof
|
|
CN112186097A
|
|
Structure for optimizing write performance of magnetic random access memory and preparation method thereof
|
|
CN112186096A
|
|
Magnetic random access memory and preparation method thereof
|
|
CN110112288A
|
|
A method of preparing magnetic tunneling junction cell array
|
|
CN112086555A
|
|
Method for preparing magnetic tunnel junction unit array
|
|
CN112086554A
|
|
Magnetic storage unit of magnetic random access memory
|
|
CN111987216A
|
|
Preparation method of pseudo-magnetic tunnel junction unit for replacing through hole
|
|
CN111951876A
|
|
MRAM chip with writing detection function and dynamic redundancy and data reading and writing method thereof
|
|
CN111951845A
|
|
MRAM chip for hierarchical management of redundant storage
|
|
CN111899783A
|
|
High-speed MRAM chip using write detection and data read-write method thereof
|
|
CN111864057A
|
|
Magnetic random access device and magnetic tunnel junction storage unit
|
|
CN111863059A
|
|
MRAM chip with dynamic redundancy function
|
|
CN111863865A
|
|
Pseudo magnetic tunnel junction unit
|
|
CN111816763A
|
|
Preparation method of magnetic tunnel junction storage array unit and peripheral circuit thereof
|
