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SANDISK TECHNOLOGIES LLC

Overview
  • Total Patents
    2,558
  • GoodIP Patent Rank
    643
  • Filing trend
    ⇩ 5.0%
About

SANDISK TECHNOLOGIES LLC has a total of 2,558 patent applications. It decreased the IP activity by 5.0%. Its first patent ever was published in 2001. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets computer technology, semiconductors and basic communication technologies are NUMONYX BV, SHANGHAI CIYU INFORMATION TECH CO LTD and RAMTRON INTERNATL CORP.

Patent filings in countries

World map showing SANDISK TECHNOLOGIES LLCs patent filings in countries

Patent filings per year

Chart showing SANDISK TECHNOLOGIES LLCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Dong Yingda 213
#2 Alsmeier Johann 196
#3 Makala Raghuveer S 159
#4 Zhang Yanli 151
#5 Dutta Deepanshu 118
#6 Kai James 114
#7 Higashitani Masaaki 96
#8 Yang Xiang 95
#9 Ogawa Hiroyuki 90
#10 Nishikawa Masatoshi 88

Latest patents

Publication Filing date Title
US2021091063A1 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US2021082865A1 Methods for reusing substrates during manufacture of a bonded assembly including a logic die and a memory die
US2021074727A1 Antiferroelectric memory devices and methods of making the same
US2021066348A1 Antiferroelectric memory devices and methods of making the same
US2021035965A1 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US2021005617A1 Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same
US2020388688A1 Three-dimensional memory device including a silicon-germanium source contact layer and method of making the same
US2020381012A1 Magnetic head with assisted magnetic recording and method of making thereof
US2020335516A1 Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
US2020335487A1 Three-dimensional memory device having an epitaxial vertical semiconductor channel and method for making the same
US2021036019A1 Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same
US2021027138A1 Reservoir computing networks using oscillators
US2020356718A1 Implementation of deep neural networks for testing and quality control in the production of memory devices
US2021028135A1 Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same
US2021028136A1 Bonded assembly containing oxidation barriers, hybrid bonding, or air gap, and methods of forming the same
US10971202B1 Low latency data transfer
WO2021071545A1 Three-dimensional memory die containing stress-compensating slit trench structures or stress-absorbing seal ring structures and methods for making the same
US2020258816A1 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
US2020258817A1 Bonded three-dimensional memory devices and methods of making the same by replacing carrier substrate with source layer
WO2021029916A1 Three-dimensional memory device containing alternating stack of source layers and drain layers and vertical gate electrodes