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MATRIX SEMICONDUCTOR INC

Overview
  • Total Patents
    224
About

MATRIX SEMICONDUCTOR INC has a total of 224 patent applications. Its first patent ever was published in 1998. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets computer technology, semiconductors and machines are SHANGHAI CIYU INFORMATION TECH CO LTD, TACHYON SEMICONDUCTOR CORP and CROSSBAR INC.

Patent filings per year

Chart showing MATRIX SEMICONDUCTOR INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Scheuerlein Roy E 60
#2 Johnson Mark G 53
#3 Cleeves James M 44
#4 Lee Thomas H 39
#5 Moore Christopher S 37
#6 Walker Andrew J 25
#7 March Roger W 24
#8 Knall N Johan 24
#9 Vyvoda Michael A 23
#10 Subramanian Vivek 20

Latest patents

Publication Filing date Title
US2007102724A1 Vertical diode doped with antimony to avoid or limit dopant diffusion
US2007010100A1 Method of plasma etching transition metals and their compounds
US2007007579A1 Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
US2007007577A1 Integrated circuit embodying a non-volatile memory cell
US2007069241A1 Memory with high dielectric constant antifuses and method for using at low voltage
US2005226067A1 Nonvolatile memory cell operating by increasing order in polycrystalline semiconductor material
US2006273298A1 Rewriteable memory cell comprising a transistor and resistance-switching material in series
US2006250836A1 Rewriteable memory cell comprising a diode and a resistance-switching material
US2006249753A1 High-density nonvolatile memory array fabricated at low temperature comprising semiconductor diodes
US7054219B1 Transistor layout configuration for tight-pitched memory array lines
US2005158950A1 Non-volatile memory cell comprising a dielectric layer and a phase change material in series
US2006067127A1 Method of programming a monolithic three-dimensional memory
US2006083069A1 System and method of controlling a three-dimensional memory
US2006067117A1 Fuse memory cell comprising a diode, the diode serving as the fuse element
US2005221200A1 Photomask features with chromeless nonprinting phase shifting window
AU2003300480A1 Nand memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
WO2004061863A2 Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same
US6951780B1 Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays
WO2004061851A2 An improved method for making high-density nonvolatile memory
US7023739B2 NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same