SEMI SOLUTIONS LLC has a total of 13 patent applications. Its first patent ever was published in 2004. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and China. Its main competitors in its focus markets semiconductors, computer technology and basic communication technologies are SYNERGY SEMICONDUCTOR CORP, HOUSTON THEODORE W and INMOS CORP.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 9 | |
#2 | WIPO (World Intellectual Property Organization) | 2 | |
#3 | China | 1 | |
#4 | EPO (European Patent Office) | 1 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Computer technology | |
#3 | Basic communication technologies | |
#4 | Machines |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Static stores | |
#3 | Pulse technique | |
#4 | Unspecified technologies |
# | Name | Total Patents |
---|---|---|
#1 | Kapoor Ashok Kumar | 6 |
#2 | Strain Robert | 5 |
#3 | Marko Reuven | 4 |
#4 | Kapoor Ashok K | 3 |
#5 | Strain Robert J | 3 |
#6 | Kapoor Ashok | 3 |
Publication | Filing date | Title |
---|---|---|
US2015236117A1 | Reduced variation MOSFET using a drain-extension-last process | |
US2010134182A1 | Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistor | |
US2009206380A1 | Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistor | |
CN101443916A | Apparatus and method for improving drive strength, leakage and stability of deep submicron MOS transistors and memory cells | |
US2006151842A1 | Apparatus and method for reducing gate leakage in deep sub-micron MOS transistors using semi-rectifying contacts | |
US2006006923A1 | Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistors | |
US2006006479A1 | Method and apparatus for increasing stability of MOS memory cells |