| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 6 | |
| #2 | EPO (European Patent Office) | 4 | |
| #3 | China | 3 | |
| #4 | Republic of Korea | 2 | |
| #5 | Canada | 1 | |
| #6 | WIPO (World Intellectual Property Organization) | 1 |
| # | Industry | |
|---|---|---|
| #1 | Computer technology | |
| #2 | Semiconductors | |
| #3 | Basic communication technologies | |
| #4 | Audio-visual technology |
| # | Technology | |
|---|---|---|
| #1 | Static stores | |
| #2 | Semiconductor devices | |
| #3 | Pulse technique | |
| #4 | Display controls | |
| #5 | Amplification control | |
| #6 | Resonators |
| # | Name | Total Patents |
|---|---|---|
| #1 | Chow Edwin | 9 |
| #2 | Chang Shang-De | 9 |
| #3 | Chang Jia-Hwang | 8 |
| #4 | Fong Vincent L | 2 |
| #5 | Mukherjee Satyen | 2 |
| #6 | Chang Thomas | 2 |
| #7 | Zhang J-H | 1 |
| #8 | Koji Saito | 1 |
| #9 | Chang S-D | 1 |
| #10 | Masashi Furumoto | 1 |
| Publication | Filing date | Title |
|---|---|---|
| WO9524057A2 | Low voltage one transistor flash eeprom cell using fowler-nordheim programming and erase | |
| US5465062A | Transition detector circuit | |
| US5097444A | Tunnel EEPROM with overerase protection |