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NINGBO ADVANCED MEMORY TECHNOLOGY CORP

Overview
  • Total Patents
    29
  • GoodIP Patent Rank
    55,926
About

NINGBO ADVANCED MEMORY TECHNOLOGY CORP has a total of 29 patent applications. Its first patent ever was published in 2015. It filed its patents most often in China and United States. Its main competitors in its focus markets semiconductors and computer technology are HAZANI EMANUEL, ARITOME SEIICHI and SAIFUN SEMICONDUCTORS LTD.

Patent filings in countries

World map showing NINGBO ADVANCED MEMORY TECHNOLOGY CORPs patent filings in countries
# Country Total Patents
#1 China 27
#2 United States 2

Patent filings per year

Chart showing NINGBO ADVANCED MEMORY TECHNOLOGY CORPs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Wu Xiaozhe 9
#2 Tao Yifang 7
#3 Zhang Jiahuang 6
#4 Wu Ruiren 6
#5 Huang Shengcai 6
#6 Jian Fanyu 5
#7 Wang Bowen 3
#8 Su Shuijin 3
#9 Su Shui-Chin 2
#10 Wu Jui-Jen 2

Latest patents

Publication Filing date Title
CN105206745A Manufacturing method for phase change memory
CN105336851A Manufacturing method of phase-change memory structure
CN105185905A Phase change storage device and manufacturing method therefor
CN105304116A Memory driving circuit
CN105261701A Method for manufacturing phase change memory
CN105261630A Phase change memory and method for manufacturing same
CN105226181A Phase-change memory and manufacture method thereof
CN105161457A Preparation method of semiconductor substrate
CN105112864A Film coating device
CN105097596A Detection method of contact hole of semiconductor apparatus
CN105097023A Non-volatile memory unit and non-volatile memory apparatus
CN105118528A Non-volatile memory device, programmable circuit and content addressable memory
CN105098071A Method for manufacturing phase-change memory
CN104993049A Phase change storage device and manufacturing method thereof
CN105098069A Preparation method of phase-change memory
CN105185828A Fin type field effect transistor and manufacturing method thereof
CN104952886A Insulating layer silicon coating structure and preparation method thereof
CN104900806A Phase change memory element and manufacturing method thereof
CN105097022A Non-volatile memory unit and non-volatile memory apparatus
CN104978988A Memory device and driving method thereof