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NEXFLASH TECHNOLOGIES INC

Overview
  • Total Patents
    15
About

NEXFLASH TECHNOLOGIES INC has a total of 15 patent applications. Its first patent ever was published in 1997. It filed its patents most often in United States. Its main competitors in its focus markets computer technology and semiconductors are GODA AKIRA, APLUS FLASH TECHNOLOGY INC and HANZAWA SATORU.

Patent filings in countries

World map showing NEXFLASH TECHNOLOGIES INCs patent filings in countries
# Country Total Patents
#1 United States 15

Patent filings per year

Chart showing NEXFLASH TECHNOLOGIES INCs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Park Joo Weon 7
#2 Han Kyung Joon 6
#3 Lee Poongyeub 4
#4 Hsia Steve K 4
#5 Park Eungjoon 4
#6 Lee Jong Seuk 3
#7 Kwon Gyu-Wan 3
#8 Tran Dung 3
#9 Sinai Keyhan 2
#10 Song Paul Jei-Zen 2

Latest patents

Publication Filing date Title
US2004213048A1 Nonvolatile memory having bit line discharge, and method of operation thereof
US6768671B1 Nonvolatile memory and method of operation thereof to control erase disturb
US6771541B1 Method and apparatus for providing row redundancy in nonvolatile semiconductor memory
US6873004B1 Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof
US2004141374A1 Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof
US2004153902A1 Serial flash integrated circuit having error detection and correction
US2004080979A1 Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits therefor
US6826080B2 Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor
US6728140B2 Threshold voltage convergence
US2002167843A1 Method and apparatus for multiple byte or page mode programming of a flash memory array
US6731544B2 Method and apparatus for multiple byte or page mode programming of a flash memory array
US5978275A Erase and program control state machines for flash memory
US5991198A Local row decoder and associated control logic for fowler-nordheim tunneling based flash memory
US5973961A Divided bit line system for non-volatile memory devices
US6171907B1 Method for fabricating tunnel window in EEPROM cell with reduced cell pitch