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SAIFUN SEMICONDUCTORS LTD

Overview
  • Total Patents
    285
About

SAIFUN SEMICONDUCTORS LTD has a total of 285 patent applications. Its first patent ever was published in 1996. It filed its patents most often in United States, EPO (European Patent Office) and Japan. Its main competitors in its focus markets computer technology, semiconductors and machines are HEFEI RELIANCE MEMORY LTD, QIMONDA FLASH GMBH and NINGBO ADVANCED MEMORY TECHNOLOGY CORP.

Patent filings per year

Chart showing SAIFUN SEMICONDUCTORS LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Eitan Boaz 150
#2 Maayan Eduardo 74
#3 Bloom Ilan 33
#4 Shappir Assaf 27
#5 Cohen Guy 25
#6 Sofer Yair 21
#7 Lusky Eli 20
#8 Eliyahu Ron 18
#9 Eisen Shai 16
#10 Dadashev Oleg 15

Latest patents

Publication Filing date Title
US2009154242A1 Flash memory with optimized write sector spares
WO2008065644A1 Method for embedding non-volatile memory with logic circuitry
US2008128774A1 Forming silicon trench isolation (STI) in semiconductor devices self-aligned to diffusion
WO2008032326A2 Methods, circuits and systems for reading non-volatile memory cells
US2008002464A1 Non-volatile memory device and method for reading cells
US2007168637A1 Memory array programming circuit and a method for using the circuit
US2009003073A1 Rd algorithm improvement for NROM technology
US2007200180A1 Double density NROM with nitride strips (DDNS)
US2007159880A1 Secondary injection for NROM
US2008094127A1 Measuring and controlling current consumption and output current of charge pumps
JP2007088457A Symmetrical array manufacturing method
US2007196982A1 Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US2007195607A1 NROM non-volatile memory and mode of operation
CN1917217A Dense non-volatile memory array and method of fabrication
US2007051982A1 Dense non-volatile memory array and method of fabrication
DE102006027424A1 Access to an NROM matrix
US2006211188A1 Non-volatile memory structure and method of fabrication
US2007173017A1 Advanced non-volatile memory array and method of fabrication thereof
EP1686592A2 Partial erase verify
US2007153575A1 Method, system, and circuit for operating a non-volatile memory array