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RIIPURU KK

Overview
  • Total Patents
    40
About

RIIPURU KK has a total of 40 patent applications. Its first patent ever was published in 2000. It filed its patents most often in Japan. Its main competitors in its focus markets electrical machinery and energy, micro-structure and nano-technology and optics are LEEPL CORP, LEICA MICROSYS LITHOGRAPHY LTD and AET JAPAN KK.

Patent filings in countries

World map showing RIIPURU KKs patent filings in countries
# Country Total Patents
#1 Japan 40

Patent filings per year

Chart showing RIIPURU KKs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Higuchi Akira 19
#2 Shimazu Nobuo 9
#3 Nozue Hiroshi 7
#4 Uchiumi Takao 6
#5 Endo Akihiro 3
#6 Inoue Osamu 3
#7 Miyatake Tsutomu 2
#8 Yoshida Akira 2
#9 Samoto Norihiko 2
#10 Tono Hidehiro 1

Latest patents

Publication Filing date Title
JP2005117063A Electron beam proximity exposure system
JP2006156780A Superposing exposure method
JP2006147871A Overlay exposure method
JP2006145874A Mask for charged particle exposure
JP2005353795A Alignment method for mask and wafer and set of mask
JP2005317412A Measuring method for intensity distribution of electron beams and intensity distribution measuring device
JP2005235991A Transfer apparatus
JP2005183612A Mask for electron beam exposure, and method of exposure using the mask
JP2005167009A Manufacturing method of electronic beam exposure mask
JP2005039144A Electron-beam drewing system and method therefor
JP2005039145A Stencil mask and alignment apparatus
JP2004356276A Charged beam proximity lithography method and system
JP2004356155A Method for aligning mask and wafer
JP2004356156A Method and equipment for aligning mask and wafer
JP2004335501A Stencil mask and its manufacturing method
JP2004088058A Device and method of exposure
JP2004214526A Charged particle exposure method, complementary division mask used therefor and semiconductor device manufactured by using the same
JP2004193210A Electron beam proximity aligning method and aligner
JP2004146670A Method for measuring error of pattern position of mask and aligner used therefor
JP2004128394A Alignment device of mask and wafer