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GB202100336D0
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Semiconductor device
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GB202100130D0
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Semiconductor device and method for designing thereof
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GB202019586D0
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Semiconductor device
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GB202003441D0
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Semiconductor device with fortifying layer
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GB202003442D0
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Insulated gate switched transistor
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GB202001950D0
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Trench planar mos cell for transistors
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GB201919430D0
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Fortified trenche planar mos power transistor
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GB201915864D0
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Semiconductor device and method of manufacturing thereof
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GB201914274D0
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Semiconductor device having a gate electrode formed in a trench structure
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GB201914275D0
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Semiconductor device with dual trench structure
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GB201912918D0
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Method for forming a low injection p-type contact region and power semiconductor devices with the same
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GB201912236D0
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Electrically shorted PN junctions and functional semiconductor designs for the same
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GB201912237D0
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Bipolar semiconductor device and method for manufacturing such a semiconductor device
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GB201911357D0
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Semiconductor device and method for producing same
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GB201910012D0
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Semiconductor device and method for producing same
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GB201908380D0
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Non-punch-through reverse-conducting power semiconductor device and method for producing same
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