|
EP2676294A1
|
|
Semiconductor component with reduced self pinch off
|
|
EP2628184A1
|
|
Method for switching a normally on field effect transistor
|
|
EP2409327A1
|
|
Vertically contacted electronic component and method for producing same
|
|
WO2010081530A1
|
|
Self-locking switch
|
|
WO2010057651A1
|
|
Heterostructure element having a low barrier height and a high current density
|
|
EP2162815A1
|
|
Semiconductor component with nested contacts
|
|
WO2008151842A1
|
|
Logic circuit on the basis of nitrides of main group iii elements
|
|
EP2018673A2
|
|
Micromechanical actuators consisting of semiconductors based on group iii nitrides
|
|
EP1913372A1
|
|
Wide-gap semiconductor sensor with insulating cover layer
|
|
EP1606600A2
|
|
Sensor element with self-supporting bar structures made of group iii nitride based semiconductors
|
|
EP1410443A2
|
|
Field effect transistor
|
|
US7352008B2
|
|
Heterostructure with rear-face donor doping
|
