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INFINEON TECHNOLOGIES DRESDEN GMBH

Overview
  • Total Patents
    290
  • GoodIP Patent Rank
    6,424
  • Filing trend
    ⇩ 56.0%
About

INFINEON TECHNOLOGIES DRESDEN GMBH has a total of 290 patent applications. It decreased the IP activity by 56.0%. Its first patent ever was published in 2012. It filed its patents most often in United States, Germany and China. Its main competitors in its focus markets semiconductors, micro-structure and nano-technology and basic communication technologies are TEH WENG HONG, INFINEON TECH DRESDEN GMBH & CO KG and UNISEM M BERHAD.

Patent filings in countries

World map showing INFINEON TECHNOLOGIES DRESDEN GMBHs patent filings in countries

Patent filings per year

Chart showing INFINEON TECHNOLOGIES DRESDEN GMBHs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kautzsch Thoralf 65
#2 Weis Rolf 65
#3 Bieselt Steffen 45
#4 Lemke Marko 43
#5 Tegen Stefan 41
#6 Vogt Mirko 34
#7 Stegemann Maik 33
#8 Froehlich Heiko 28
#9 Scire Alessia 24
#10 Weyers Joachim 18

Latest patents

Publication Filing date Title
DE102018208650A1 SENSOR ARRANGEMENT, PARTICLE SENSOR AND METHOD FOR MANUFACTURING A SENSOR ARRANGEMENT
DE102018111079A1 MICROMECHANICAL SENSOR AND METHOD FOR PRODUCING A MICROELECTROMECHANICAL SENSOR
DE102018109242A1 METHOD FOR PRODUCING A DOPED TERROR FIELD AND A DOTED CONTACT AREA IN A SEMICONDUCTOR BODY
DE102018105741B3 METHOD FOR PRODUCING COMPLEMENTARY DOTED SEMICONDUCTOR AREAS IN A SEMICONDUCTOR BODY AND SEMICONDUCTOR ASSEMBLY
DE102017131274B3 TRANSISTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
DE102017130683A1 contact hole
DE102017130092A1 IGBT with fully depleted n and p channel regions
DE102017126853A1 Semiconductor device with buffer region
DE102017218772A1 Microlens with a strapless optical interference filter
US2019031499A1 Forming an offset in an interdigitated capacitor of a microelectromechanical systems (MEMS) device
DE102017112248A1 Electronic circuit having a plurality of electronic switches connected in series and a drive circuit and method
DE102017206412A1 A microelectromechanical device, method of fabricating a microelectromechanical device, and method of fabricating a system on a chip using a CMOS process
US2018290883A1 Forming a microelectromechanical systems (MEMS) device using silicon-on-nothing and epitaxy
DE102017105548A1 SEMICONDUCTOR DEVICE CONTAINING A GATE CONTACT STRUCTURE
US2018217178A1 Accelerometer with compatibility to complementary metal-oxide-semiconductor technologies
US2017115452A1 Silicon light trap devices, systems and methods
US2018175846A1 Electronic switching and reverse polarity protection circuit
DE102016120772A1 Semiconductor device with gate pad, gate electrode and integration layer
DE102016120691A1 A semiconductor device including a structure for protection against electrostatic discharge
DE102016118727A1 A method of manufacturing a semiconductor power device and semiconductor power device with a diode