|
KR100465118B1
|
|
Cyclically pulsed plasma atomic layer deposition method
|
|
KR100469132B1
|
|
Cyclically pulsed two level plasma atomic layer deposition apparatus and method thereof
|
|
KR100444147B1
|
|
Reactor for depositing thin film on a wafer
|
|
KR100444148B1
|
|
Apparatus for lifting wafer block
|
|
KR20050051228A
|
|
Apparatus for depositing thin film on a wafer
|
|
KR20050022643A
|
|
Method for depositing thin film on wafer
|
|
KR20050005347A
|
|
Method for depositing thin film on wafer
|
|
KR20040107699A
|
|
Wafer block and Reactor for depositing thin film on wafer using the same
|
|
KR20040103210A
|
|
Method of manufacturing a tantalum oxide
|
|
KR20040096380A
|
|
Method for cleaning of chamber for depositing metal oxide and apparatus for depositing to performing the same
|
|
KR20040088628A
|
|
Inductively-coupled plasma source producing uniform plasma by using multi-coils
|
|
KR20040085315A
|
|
Reactor for depositing thin film on wafer
|
|
KR20040084226A
|
|
Reactor for depositing thin film on wafer
|
|
KR20040080755A
|
|
Method for depositing a ALD thin film on wafer
|
|
KR20040062833A
|
|
Apparatus for depositing thin film on wafer
|
|
KR20040043921A
|
|
Method for depositing thin film on wafer using Aluminum compound
|
|
KR20040041944A
|
|
Method for depositing thin film on wafer using Hafnium compound
|
|
KR20040036230A
|
|
Semiconductor manufacturing system for dry etching process
|
|
KR20040034245A
|
|
ALD thin film deposition apparatus
|
|
KR20040035906A
|
|
ALD thin film deposition apparatus and method for depositing thin film
|
