ANGSTRON SYSTEMS INC has a total of 15 patent applications. Its first patent ever was published in 2001. It filed its patents most often in United States, WIPO (World Intellectual Property Organization) and Taiwan. Its main competitors in its focus markets surface technology and coating, semiconductors and electrical machinery and energy are SHANGHAI BETONE SEMICONDUCTOR ENERGY TECH CO LTD, SCHMID VACUUM TECHNOLOGY GMBH and LOTUS APPLIED TECH LLC.
# | Country | Total Patents | |
---|---|---|---|
#1 | United States | 5 | |
#2 | WIPO (World Intellectual Property Organization) | 4 | |
#3 | Taiwan | 3 | |
#4 | Australia | 2 | |
#5 | EPO (European Patent Office) | 1 |
# | Industry | |
---|---|---|
#1 | Surface technology and coating | |
#2 | Semiconductors | |
#3 | Electrical machinery and energy | |
#4 | Machines |
# | Technology | |
---|---|---|
#1 | Coating metallic material | |
#2 | Semiconductor devices | |
#3 | Electric discharge tubes | |
#4 | Unspecified technologies |
# | Name | Total Patents |
---|---|---|
#1 | Leeser Karl F | 15 |
#2 | Chiang Tony P | 15 |
#3 | Brown Jeffrey A | 5 |
#4 | Babcoke Jason E | 5 |
Publication | Filing date | Title |
---|---|---|
TW540093B | Atomic layer deposition system and method | |
WO02081771A2 | Atomic layer deposition system and method | |
TW511135B | Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber | |
TW522473B | Method and apparatus for improved temperature control in atomic layer deposition | |
AU3284402A | System and method for modulated ion-induced atomic layer deposition (mii-ald) | |
US6630201B2 | Adsorption process for atomic layer deposition | |
US2002144786A1 | Substrate temperature control in an ALD reactor | |
US6428859B1 | Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) | |
US6416822B1 | Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD) |