Well contact cell with doped tap region separated from active region, and methods to form same
DE102011005718A1
A method of reducing the equivalent thickness of high-k dielectrics in field effect transistors by performing a low temperature anneal process
DE102011005719A1
Increased integrity of large ε metal gate stacks by reducing STI settlements by depositing a filler after STI fabrication
DE102011005639A1
Reduce the defect rate during the deposition of a channel semiconductor alloy into an in situ lowered active area
DE102011005641A1
A method of increasing performance in transistors by reducing subsidence of active regions and by removing spacers
DE102011005642A1
A method for protecting reactive metal surfaces of semiconductor devices during transport by providing an additional protective layer
DE102011004921A1
Semiconductor device with a chip border with an integrated alignment mark
DE102011004922A1
Method of fabricating transistors with metal gate stacks with increased integrity
DE102011004757A1
Vertical memory transistors having a self-adjusting body potential fabricated in bulk substrate devices and having buried interrogation and word lines and methods of fabricating the memory transistors
DE102011004672A1
SOI semiconductor device having a substrate diode with reduced metal silicide leakage
DE102011004581A1
A technique for reducing plasma-induced etch damage during the fabrication of vias in inter-layer dielectrics by modified RF power ramp-up
DE102011004506A1
A method of fabricating a semiconductor device and semiconductor device as a fin transistor fabricated on a patterned STI region by a late stage etch
DE102011004320A1
Method for producing complementary transistors with metal gate electrode structures with large ε and epitaxially produced semiconductor materials in the drain and source regions
DE102011004322A1
A method of manufacturing a semiconductor device having self-aligned contact elements and an exchange gate electrode structure
DE102011004323A1
Semiconductor device with self-aligned contact elements and method for its production
DE102011003439A1
Method for forward current increase in field effect transistors by asymmetric concentration profiles of alloying materials of a channel semiconductor alloy and semiconductor device
DE102011003385A1
Method for producing a semiconductor structure with deformation-inducing semiconductor material
DE102011003232A1
A manufacturing method for large-sized metal gate electrode structures made by an exchange gate method based on improved flatness of dummy materials
DE102011002877A1
A method of making an SOI semiconductor device having a substrate diode and a layered diode fabricated using a common well implantation mask
DE102011002769A1
A semiconductor device and method of making a hybrid contact structure having small aspect ratio contacts in a semiconductor device
