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SCHEIPER THILO

Overview
  • Total Patents
    31
About

SCHEIPER THILO has a total of 31 patent applications. Its first patent ever was published in 2010. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors and computer technology are YANG WEN-KUN, KRONHOLZ STEPHAN and MCCARTEN JOHN P.

Patent filings in countries

World map showing SCHEIPER THILOs patent filings in countries
# Country Total Patents
#1 United States 31

Patent filings per year

Chart showing SCHEIPER THILOs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Scheiper Thilo 31
#2 Hoentschel Jan 15
#3 Beyer Sven 12
#4 Flachowsky Stefan 10
#5 Wei Andy 9
#6 Griebenow Uwe 6
#7 Baars Peter 3
#8 Langdon Steven 2
#9 Herrmann Tom 1
#10 Fitz Clemens 1

Latest patents

Publication Filing date Title
US2013320409A1 Source and drain architecture in an active region of a P-channel transistor by tilted implantation
US2013295767A1 Increased transistor performance by implementing an additional cleaning process in a stress liner approach
US2013270645A1 Workfunction metal stacks for a final metal gate
US2013256901A1 Methods for fabricating integrated circuits having substrate contacts and integrated circuits having substrate contacts
US2013244388A1 Methods for fabricating integrated circuits with reduced electrical parameter variation
US2013230948A1 Multiple step implant process for forming source/drain regions on semiconductor devices
US2013075820A1 Superior integrity of high-k metal gate stacks by forming STI regions after gate metals
US2013071977A1 Methods for fabricating integrated circuits having gate to active and gate to gate interconnects
US2013049128A1 Semiconductor device with dual metal silicide regions and methods of making same
US2013052819A1 Methods of forming metal silicide regions on semiconductor devices using different temperatures
US2011127614A1 Reducing the series resistance in sophisticated transistors by embedding metal silicide contact regions reliably into highly doped semiconductor material
US2011101427A1 Transistor including a high-k metal gate electrode structure formed prior to drain/source regions on the basis of a superior implantation masking effect
US2010193860A1 Short channel transistor with reduced length variation by using amorphous electrode material during implantation