| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 15 | |
| #2 | Republic of Korea | 10 | |
| #3 | Taiwan | 10 | |
| #4 | China | 6 | |
| #5 | Germany | 2 | |
| #6 | WIPO (World Intellectual Property Organization) | 2 | |
| #7 | Switzerland | 1 | |
| #8 | France | 1 | |
| #9 | Sweden | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Optics | |
| #3 | Surface technology and coating | |
| #4 | Electrical machinery and energy | |
| #5 | Machine tools | |
| #6 | Machines | |
| #7 | Audio-visual technology |
| # | Name | Total Patents |
|---|---|---|
| #1 | Taniguchi Yukio | 21 |
| #2 | Matsumura Masakiyo | 14 |
| #3 | Goto Masashi | 9 |
| #4 | Nakata Yukihiko | 9 |
| #5 | Nishitani Mikihiko | 8 |
| #6 | Kimura Yoshinobu | 8 |
| #7 | Jyumonji Masayuki | 7 |
| #8 | Hiramatsu Masato | 7 |
| #9 | Yamaguchi Hirotaka | 6 |
| #10 | Azuma Kazufumi | 6 |
| Publication | Filing date | Title |
|---|---|---|
| CN101452960A | Thin film transistor, integrated circuit, and liquid crystal display | |
| WO03078678A1 | Method for forming interconnection metal layer, method for selectively forming metal, apparatus for selectively forming metal, and substrate apparatus | |
| US2005161738A1 | Thin film transistor, circuit device and liquid crystal display |