|
WO9933094A1
|
|
Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent
|
|
WO9830667A1
|
|
Semiconductor wafer cleaning composition and method with aqueous ammonium fluoride and amine
|
|
WO9828395A1
|
|
Formulations including a 1,3-dicarbonyl compound chelating agent for stripping residues from semiconductor substrates
|
|
WO9822568A1
|
|
Stripping formulation including catechol, hydroxylamine, non-alkanolamine, water for post plasma ashed wafer cleaning
|
|
WO9702958A1
|
|
Organic amine/hydrogen fluoride etchant composition and method
|
|
US5397546A
|
|
Scrubber sterilization system
|
|
US5320709A
|
|
Method for selective removal of organometallic and organosilicon residues and damaged oxides using anhydrous ammonium fluoride solution
|
|
WO9000579A1
|
|
Stripping composition using n-cyclohexyl-2-pyrrolidone
|
