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YIELD MICROELECTRONICS CORP

Overview
  • Total Patents
    78
  • GoodIP Patent Rank
    44,280
  • Filing trend
    ⇩ 50.0%
About

YIELD MICROELECTRONICS CORP has a total of 78 patent applications. It decreased the IP activity by 50.0%. Its first patent ever was published in 2004. It filed its patents most often in Taiwan, China and United States. Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are LEE CHENG HUNG, NEO SEMICONDUCTOR INC and INTEGRATED MEMORY TECH INC.

Patent filings in countries

World map showing YIELD MICROELECTRONICS CORPs patent filings in countries
# Country Total Patents
#1 Taiwan 32
#2 China 27
#3 United States 17
#4 Japan 2

Patent filings per year

Chart showing YIELD MICROELECTRONICS CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Lin Xin-Zhang 21
#2 Huang Wen-Qian 19
#3 Lin Xinzhang 16
#4 Huang Wen-Chien 14
#5 Lin Hsin-Chang 13
#6 Huang Wenqian 13
#7 Fan Ya-Ting 12
#8 Fan Yating 9
#9 Xinzhang Lin 7
#10 Zhang Hao-Cheng 6

Latest patents

Publication Filing date Title
US10854297B1 Operating method of a low current electrically erasable programmable read only memory (EEPROM) array
US2021104279A1 Single-gate multiple-time programming non-volatile memory array and operating method thereof
CN111899777A Single-gate multi-write non-volatile memory and operation method thereof
US2020350328A1 Single-gate multiple-time programming non-volatile memory and operation method thereof
US10685716B1 Method of fast erasing low-current EEPROM array
US2020327944A1 Method of fast erasing an eeprom with low-voltages, where ions are implanted at a higher concentration to increase the intensity of the electric field between the gate and the substrate or between the gate and the transistor and thus decrease the required voltage difference for erasing the eeprom
TW202038438A Single-gate multi-write non-volatile memory and its operation method capable of shortening the length of the control circuit, decreasing the overall area, and reducing the production cost of non-volatile memory
CN111739571A Fast erasing method for low-current EEPROM array
CN111739572A Low-voltage quick erasing method for electronic writing erasable read-only memory
TW202034332A Fast erasing method for low-current electronic erasable rewritable read-only memory array including setting a source or a drain to be floating
TW202034504A Low-voltage fast erasing method for electronic writing erasable rewritable read-only memory implanting ions of the same type to increase the ion concentration so as to reduce the voltage difference for erasing
US2020118631A1 Method for operating low-current EEPROM array
CN110880350A Method for operating low-current electrically erasable rewritable read-only memory array
TW202009938A Method for operating low-current electrically erasable programmable read only memory array using a special bias voltage setting to provide the functions of byte writing and erasing
US10141057B1 Erasing method of single-gate non-volatile memory
CN109698005A The method for deleting of single gate nonvolatile memory
TW201916052A Erasing method of single gate non-volatile memory reducing the erasing voltage is reduced, increasing the erasing speed and preventing excessive erasing
US2019088330A1 Low voltage difference operated EEPROM and operating method thereof
CN109427793A The electronics write-in formula of erasing of low-voltage difference can make carbon copies read-only memory and operating method
CN107026170A Single gate repeatedly writes non-voltile memory and its operating method