Operating method of a low current electrically erasable programmable read only memory (EEPROM) array
US2021104279A1
Single-gate multiple-time programming non-volatile memory array and operating method thereof
CN111899777A
Single-gate multi-write non-volatile memory and operation method thereof
US2020350328A1
Single-gate multiple-time programming non-volatile memory and operation method thereof
US10685716B1
Method of fast erasing low-current EEPROM array
US2020327944A1
Method of fast erasing an eeprom with low-voltages, where ions are implanted at a higher concentration to increase the intensity of the electric field between the gate and the substrate or between the gate and the transistor and thus decrease the required voltage difference for erasing the eeprom
TW202038438A
Single-gate multi-write non-volatile memory and its operation method capable of shortening the length of the control circuit, decreasing the overall area, and reducing the production cost of non-volatile memory
CN111739571A
Fast erasing method for low-current EEPROM array
CN111739572A
Low-voltage quick erasing method for electronic writing erasable read-only memory
TW202034332A
Fast erasing method for low-current electronic erasable rewritable read-only memory array including setting a source or a drain to be floating
TW202034504A
Low-voltage fast erasing method for electronic writing erasable rewritable read-only memory implanting ions of the same type to increase the ion concentration so as to reduce the voltage difference for erasing
US2020118631A1
Method for operating low-current EEPROM array
CN110880350A
Method for operating low-current electrically erasable rewritable read-only memory array
TW202009938A
Method for operating low-current electrically erasable programmable read only memory array using a special bias voltage setting to provide the functions of byte writing and erasing
US10141057B1
Erasing method of single-gate non-volatile memory
CN109698005A
The method for deleting of single gate nonvolatile memory
TW201916052A
Erasing method of single gate non-volatile memory reducing the erasing voltage is reduced, increasing the erasing speed and preventing excessive erasing
US2019088330A1
Low voltage difference operated EEPROM and operating method thereof
CN109427793A
The electronics write-in formula of erasing of low-voltage difference can make carbon copies read-only memory and operating method
CN107026170A
Single gate repeatedly writes non-voltile memory and its operating method