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CHUNG SHINE C

Overview
  • Total Patents
    76
  • GoodIP Patent Rank
    74,998
About

CHUNG SHINE C has a total of 76 patent applications. Its first patent ever was published in 2002. It filed its patents most often in United States, China and EPO (European Patent Office). Its main competitors in its focus markets computer technology, semiconductors and telecommunications are MAGLABS INC, ATTOPSEMI TECH CO LTD and COPEE TECH COMPANY.

Patent filings in countries

World map showing CHUNG SHINE Cs patent filings in countries

Patent filings per year

Chart showing CHUNG SHINE Cs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chung Shine C 76

Latest patents

Publication Filing date Title
US2018301198A1 Low power read operation for programmable resistive memories
US2016276043A1 Integrated OTP memory for providing MTP memory
US2016191041A1 Circuit and Method for Power-On Reset of an Integrated Circuit
US2016071582A1 Method and system of programmable resistive devices with read capability using a low supply voltage
US2016019983A1 System and method of a novel redundancy scheme for OTP
US2015187431A1 One-time programmable memory devices using FinFET technology
US2015009743A1 Low-pin-count non-volatile memory interface for 3D IC
US2015029777A1 Circuit and system of using junction diode of MOS as program selector for programmable resistive devices
CN106133841A Single programmable memory body, electronic system, operation single programmable memory body method and programming single programmable memory body method
US2015003143A1 One-time programmable devices having program selector for electrical fuses with extended area
US2015003142A1 Method and structure for reliable electrical fuse programming
US2014340954A1 Low-pin-count non-volatile memory interface with soft programming capability
US2014160830A1 Programmable resistive device and memory using diode as selector
US2014269135A1 Circuit and system for concurrently programming multiple bits of OTP memory devices
US2014092674A1 Circuits and methods of a self-timed high speed SRAM
US2014071726A1 OTP memories functioning as an MTP memory
US2014016394A1 Circuit and system of using junction diode as program selector for metal fuses for one-time programmable devices
US2014131711A1 Structures and techniques for using semiconductor body to construct bipolar junction transistors
US2013200488A1 Structures and techniques for using mesh-structure diodes for electro-static discharge (ESD) protection
US2013215663A1 Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink