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INTEGRATED MEMORY TECH INC

Overview
  • Total Patents
    51
About

INTEGRATED MEMORY TECH INC has a total of 51 patent applications. Its first patent ever was published in 1996. It filed its patents most often in United States, China and Taiwan. Its main competitors in its focus markets computer technology, semiconductors and electrical machinery and energy are JIANGSU ADVANCED MEMORY TECH CO LTD, 4d s ltd and LEE CHENG HUNG.

Patent filings per year

Chart showing INTEGRATED MEMORY TECH INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Jenq Ching-Shi 17
#2 Lin Tien L 15
#3 Tsao Cheng-Chung 11
#4 Lin Tien-Ler 9
#5 Sheen Ben Yau 8
#6 Yen Ting P 6
#7 Yau Sheen Ben 5
#8 Wang Ching Dong 4
#9 Jeng Ching-Shi 2
#10 Zhengzhong Cao 1

Latest patents

Publication Filing date Title
CN101410979A Scalable flash EEPROM memory cell with notched floating gate and graded source region
US7009244B2 Scalable flash EEPROM memory cell with notched floating gate and graded source region
US6967870B2 Combination NAND-NOR memory device
CN1368736A Improved integrated circuit memory and work method with interleaving readout and programmed ability
US2003087493A1 Scalable flash EEPROM memory cell with floating gate spacer wrapped by control gate
US6507514B1 Integrated circuit memory chip for use in single or multi-chip packaging
US6377507B1 Non-volatile memory device having high speed page mode operation
US6469955B1 Integrated circuit memory device having interleaved read and program capabilities and methods of operating same
US6232185B1 Method of making a floating gate memory cell
US6134149A Method and apparatus for reducing high current during chip erase in flash memories
TW432703B Flash memory array
US6134144A Flash memory array
US6057575A Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
US5886887A Voltage multiplier with low threshold voltage sensitivity
US5856943A Scalable flash EEPROM memory cell and array
US5912843A Scalable flash EEPROM memory cell, method of manufacturing and operation thereof
TW314660B A scalable flash EEPROM memory cell and array