| # | Country | Total Patents | |
|---|---|---|---|
| #1 | United States | 8 | |
| #2 | Taiwan | 4 | |
| #3 | WIPO (World Intellectual Property Organization) | 4 |
| # | Industry | |
|---|---|---|
| #1 | Computer technology | |
| #2 | Semiconductors | |
| #3 | Electrical machinery and energy | |
| #4 | Surface technology and coating |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Static stores | |
| #3 | Electric discharge tubes | |
| #4 | Coating metallic material |
| # | Name | Total Patents |
|---|---|---|
| #1 | Desu Seshubabu | 14 |
| #2 | Van Buskirk Michael | 7 |
| #3 | Cleveland Lee | 2 |
| #4 | Yang-Scharlotta Jean | 1 |
| #5 | Nagashima Makoto | 1 |
| #6 | Pfluger Kurt | 1 |
| #7 | Tan Theng Kiat Peter | 1 |
| #8 | Schuette Franz Michael | 1 |
| Publication | Filing date | Title |
|---|---|---|
| US10381558B1 | Resistive memory device having a retention layer | |
| US2019288197A1 | Resistive memory device having ohmic contacts | |
| US10319907B1 | Resistive memory device having a template layer | |
| US2019288196A1 | Resistive memory device having a conductive barrier layer | |
| US2014269007A1 | Complementary metal oxide or metal nitride heterojunction memory devices with asymmetric hysteresis property | |
| US2014376299A1 | Methods and circuits for bulk erase of resistive memory |