Learn more

WAFER WORKS EPITAXIAL CORP

Overview
  • Total Patents
    20
  • GoodIP Patent Rank
    112,854
  • Filing trend
    ⇧ 500.0%
About

WAFER WORKS EPITAXIAL CORP has a total of 20 patent applications. It increased the IP activity by 500.0%. Its first patent ever was published in 2012. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, surface technology and coating and electrical machinery and energy are QMAT INC, GLOBAL WAFERS CO LTD and WANG WANG NANG.

Patent filings in countries

World map showing WAFER WORKS EPITAXIAL CORPs patent filings in countries
# Country Total Patents
#1 China 20

Patent filings per year

Chart showing WAFER WORKS EPITAXIAL CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Chen Haibo 8
#2 Chen Jiangang 4
#3 Gao Xuan 4
#4 Wang Hao 3
#5 Zou Chongsheng 3
#6 Lin Zhixin 2
#7 Gu Guang'An 2
#8 Zhong Minyuan 2
#9 Yao Zhen 2
#10 Zhang Jian 1

Latest patents

Publication Filing date Title
CN111415864A Super-heavy red phosphorus doped substrate epitaxy method
CN109509702A Preparation method, equipment and the two-layer epitaxial piece of two-layer epitaxial piece
CN109371471A The growing method and two-layer epitaxial piece of two-layer epitaxial piece
CN109003885A Production method, epitaxial wafer and the semiconductor devices of twin polishing epitaxial wafer
CN109003884A Preparation method, epitaxial wafer and the semiconductor devices of epitaxial wafer without back side silicon single crystal
CN109037030A Improve preparation method, epitaxial wafer and the semiconductor devices of the epitaxial wafer of back side silicon single crystal
CN109003886A The preparation method of middle thickness extension
CN107400921A Epitaxial device maintenance method
CN106783571A Polysilicon layer lithographic method in epitaxy machine platform cavity
CN106757327A The method for adjusting epitaxy machine platform cavity inner temperature uniformity
CN106757328A The method for determining epitaxy machine platform cavity inner temperature uniformity
CN106711058A Method for reducing warping of silicon wafer in epitaxial machine
CN106505093A Epitaxial wafer production method
CN105070647A Epitaxial wafer, preparation method thereof and semiconductor device
CN104818527A Epitaxial wafer production equipment
CN103605388A Method for detecting temperature of temperature field of epitaxial furnace platform through ion-implanted chip and method for correcting temperature field of epitaxial furnace platform through ion-implanted chip
CN103412272A Standard sheet for calibrating mercury-probe resistivity measuring instrument and mercury-probe resistivity measuring instrument calibration method
CN103354242A Extremely thick epitaxial wafer for high-voltage power device, and method for manufacturing same
CN103633120A Resistivity gradient distributed epitaxial wafer and production method thereof
CN103633119A Epitaxial wafer, production method thereof and super junction power device