Learn more

GLOBALWAFERS CO LTD

Overview
  • Total Patents
    360
  • GoodIP Patent Rank
    4,156
  • Filing trend
    ⇧ 78.0%
About

GLOBALWAFERS CO LTD has a total of 360 patent applications. It increased the IP activity by 78.0%. Its first patent ever was published in 2010. It filed its patents most often in United States, Taiwan and China. Its main competitors in its focus markets semiconductors, surface technology and coating and machine tools are ZING SEMICONDUCTOR CORP, QMAT INC and SUNEDISON SEMICONDUCTOR LTD.

Patent filings per year

Chart showing GLOBALWAFERS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Shih Ying-Ru 62
#2 Hsu Wen-Ching 60
#3 Wang Gang 53
#4 Li I-Ching 40
#5 Libbert Jeffrey L 34
#6 Peidous Igor 29
#7 Chuang Chih-Yuan 27
#8 Hudson Carissima Marie 25
#9 Fan Chun-I 22
#10 Huang Yen-Lun 19

Latest patents

Publication Filing date Title
WO2021061480A1 Cleave systems having spring members for cleaving a semiconductor structure and methods for cleaving such structures
WO2021050176A1 Methods for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method and a single crystal silicon ingot grown by this method
US2021032769A1 Production and use of dynamic state charts when growing a single crystal silicon ingot
US2020407869A1 Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
WO2020214531A1 Methods for growing a single crystal silicon ingot using continuous czochralski method
US2020325594A1 Process for preparing ingot having reduced distortion at late body length
TWI716304B Surface processing method of silicon carbide wafer
US2020208294A1 Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
WO2020131458A1 Sample rod center slab resistivity measurement during single crystal silicon ingot production
US2020171706A1 Slurry sprayers, adjustable supports for same, and methods for slicing a silicon ingot
WO2020123074A1 Ingot puller apparatus that include a doping conduit with a porous partition member for subliming solid dopant
US2021079554A1 Methods for growing a nitrogen doped single crystal silicon ingot using continuous czochralski method
US2021079553A1 Single crystal silicon ingot having axial uniformity
WO2020076448A1 Dopant concentration control in silicon melt to enhance the ingot quality
TWI701102B Fixture module
TWI713140B Ingot fixing fixture
US2020083057A1 Methods for polishing semiconductor substrates that adjust for pad-to-pad variance
TWI701717B Epitaxial structure
TWI698914B Semiconductor epitaxial structure and method of forming the same
TW202103053A Method for counting quantity of sheet materials