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SCIOCS CO LTD

Overview
  • Total Patents
    240
  • GoodIP Patent Rank
    6,069
  • Filing trend
    ⇩ 3.0%
About

SCIOCS CO LTD has a total of 240 patent applications. It decreased the IP activity by 3.0%. Its first patent ever was published in 2014. It filed its patents most often in Japan, WIPO (World Intellectual Property Organization) and United States. Its main competitors in its focus markets semiconductors, surface technology and coating and materials and metallurgy are GLOBAL WAFERS CO LTD, QMAT INC and WAFER WORKS EPITAXIAL CORP.

Patent filings in countries

World map showing SCIOCS CO LTDs patent filings in countries

Patent filings per year

Chart showing SCIOCS CO LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Horikiri Fumimasa 82
#2 Yoshida Takehiro 77
#3 Fujikura Hajime 49
#4 Shibata Masatomo 24
#5 Shibata Kenji 23
#6 Watanabe Kazutoshi 23
#7 Konno Taichiro 18
#8 Tanaka Takeshi 14
#9 Fukuhara Noboru 13
#10 Narita Yoshinobu 12

Latest patents

Publication Filing date Title
WO2021075369A1 Nitride semiconductor substrate, multilayer structure, and method of manufacturing nitride semiconductor substrate
JP2020182002A Nitride semiconductor template and nitride semiconductor device
WO2021020040A1 Method for manufacturing structure, and structure
WO2021020041A1 Method for producing structural body
WO2021044724A1 Method and device for manufacturing structure
WO2020217768A1 Structure manufacturing method and intermediate structure
WO2020217769A1 Method for producing structure, apparatus for producing structure, and intermediate structure
US2020259046A1 Aluminum nitride laminate member and light-emitting device
JP2020125233A Nitride semiconductor substrate
JP2020014024A Laminate board with piezoelectric film, element with piezoelectric film, and method for manufacturing laminate board with piezoelectric film
JP2020033254A Nitride semiconductor substrate
JP2020033252A Nitride semiconductor substrate
JP2020033253A Nitride semiconductor substrate
JP2020075850A Nitride semiconductor substrate manufacturing method
JP2020132513A Aluminum nitride laminate member and light-emitting device
JP2020096164A Manufacturing method and device of structure, and light-irradiation device
JP2020184606A Method for manufacturing structure, manufacturing apparatus and intermediate structure
JP2020068371A Method and device for manufacturing structure
CN110777433A Nitride crystal
JP2019167294A Manufacturing method of crystal substrate, and crystal substrate