SAINT GOBAIN LUMILOG has a total of 20 patent applications. It increased the IP activity by 50.0%. Its first patent ever was published in 2014. It filed its patents most often in WIPO (World Intellectual Property Organization), France and Taiwan. Its main competitors in its focus markets semiconductors, surface technology and coating and chemical engineering are WANG WANG NANG, ELEMENT SIX TECHNOLOGIES US CORP and SHANGHAI ZING SEMICONDUCTOR TECH CO LTD.
# | Country | Total Patents | |
---|---|---|---|
#1 | WIPO (World Intellectual Property Organization) | 6 | |
#2 | France | 4 | |
#3 | Taiwan | 4 | |
#4 | United States | 4 | |
#5 | EPO (European Patent Office) | 2 |
# | Industry | |
---|---|---|
#1 | Semiconductors | |
#2 | Surface technology and coating | |
#3 | Chemical engineering | |
#4 | Mechanical elements |
# | Technology | |
---|---|---|
#1 | Semiconductor devices | |
#2 | Single-crystal-growth | |
#3 | Chemical or physical processes | |
#4 | Coating metallic material | |
#5 | Fluid dynamics |
# | Name | Total Patents |
---|---|---|
#1 | Beaumont Bernard | 18 |
#2 | Faurie Jean-Pierre | 12 |
#3 | Cole Jason | 4 |
#4 | Le Roux Vianney | 4 |
#5 | Tendille Florian | 4 |
#6 | Gelly Vincent | 2 |
#7 | Nahas Nabil | 2 |
#8 | Pourouchottaman E Manivannane | 1 |
#9 | Pourouchottamane Manivannane | 1 |
Publication | Filing date | Title |
---|---|---|
WO2020127603A1 | Semiconductor substrate with n-doped intermediate layer | |
WO2020127605A1 | N-co-doped semiconductor substrate | |
EP3423614A1 | Method for fabricating a group 13 nitride semiconductor substrate and group 13 nitride semiconductor substrate | |
TW201632256A | Chemical vapor deposition reactor | |
WO2016016171A1 | Process for fabricating a wafer of a semiconductor based on element-13 nitride | |
FR3029942A1 | METHOD OF MANUFACTURING ELEMENT 13 NITRIDE PLATES WITH NON-ZERO TRUNCATURE ANGLE | |
WO2014202679A1 | Semiconductor material including areas having different crystalline orientations and associated production method |