Semiconductor component manufacturing method for high-frequency engineering planar structure, involves deriving termination of back etching procedure from detection of reaching interlayer
DE102010016993A1
Semiconductor device
DE102009059303A1
Method for producing an electronic component and electronic component produced by this method
DE102009044086A1
Method for producing an electronic component and electronic component produced by this method
FR2945379A1
Miniature hyperfrequency component for surface mounting
FR2905808A1
Hyperfrequency oscillator in integrated circuit technology
DE102006022508A1
A method of manufacturing a semiconductor device having a metallic gate electrode arranged in a double trench structure
DE102006022507A1
A method of manufacturing a semiconductor device having a metallic gate electrode arranged in a double trench structure
DE102006012369A1
Method for producing a semiconductor component with a metallic control electrode and semiconductor component
FR2879889A1
MINIATURE MICROFREQUENCY HOUSING AND METHOD FOR MANUFACTURING THE HOUSING
FR2879830A1
Miniature electronic component for microwave applications
FR2874127A1
MINIATURE MICROFREQUENCY CASE FOR SURFACE MOUNTING AND METHOD FOR MANUFACTURING THE HOUSING
FR2867609A1
MINIATURE MICROWAVE POWER UNIT AND METHOD FOR MANUFACTURING THE HOUSING
DE10304722A1
Method of manufacturing a semiconductor device
FR2847723A1
ELECTRONIC HOUSING COMPONENT FOR MILLIMETER FREQUENCY APPLICATIONS
DE10238444A1
Method for producing isolated monolithically integrated semiconductor circuits
DE10225525A1
Making hetero-bipolar transistor, etches mesa structure to first stopping layer, adds passivation layer, structures with second mask and etches to base layer
DE10220999A1
Production of semiconductor component comprises forming recess trench through opening of protective layer in underlying semiconductor region and electrode base and electrode head through opening of protective layer
