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SUPERION LTD

Overview
  • Total Patents
    36
About

SUPERION LTD has a total of 36 patent applications. Its first patent ever was published in 1989. It filed its patents most often in United Kingdom, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets electrical machinery and energy, semiconductors and chemical engineering are SUMITOMO HEAVY IND ION TECHNOLOGY CO LTD, SEN CORP AN SHI AND AXCELIS COMPANY and SEN CORP AN SHI & AXCELIS CO.

Patent filings per year

Chart showing SUPERION LTDs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Aitken Derek 20
#2 Aitken Derek St Leonard S Road 1

Latest patents

Publication Filing date Title
GB0816014D0 Apparatus and method relating to the focusing of charged particles
GB0701265D0 Apparatus and method relating to removal of selected particles from a charged particle beam
GB0601510D0 Apparatus And Method Relating To Removal Of Selected Particles From A Charged Particle Beam
GB0321231D0 Apparatus and method relating to changed particle bombardment
GB0022855D0 Apparatus and method relating to ion sources and charged particle accelerator beamlines
GB0022846D0 Apparatus and method relating to ion sources and gaseous plasma
GB9813327D0 Apparatus and method relating to charged particles
GB9725552D0 Apparatus and method relating to ion beams and gaseous plasma
GB9725551D0 Apparatus and method relating to ion beams and gaseous plasma
GB9210884D0 Apparatus and methods for use in producing ions by gaseous discharge
GB9210897D0 Apparatus for and method of producing ions
GB9210887D0 Resolving slit assembly and method of ion implantation
GB9210889D0 Apparatus for and method of generating a plasma
GB9021629D0 Apparatus for and method of producing ion beams
GB9005204D0 Apparatus and methods relating to scanning ion beams
GB8924223D0 Method and apparatus relating to ion implantation
GB8922224D0 Apparatus for and method of producing ion beams
GB8922225D0 Apparatus and methods relating to ion implantation