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SMIC SHANGHAI

Overview
  • Total Patents
    26
  • GoodIP Patent Rank
    182,857
About

SMIC SHANGHAI has a total of 26 patent applications. Its first patent ever was published in 2002. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, measurement and computer technology are WUHU QIDI SEMICONDUCTOR CO LTD, UEHLING TRENT S and CHIPMOS TECHNOLOGIES LTD.

Patent filings in countries

World map showing SMIC SHANGHAIs patent filings in countries
# Country Total Patents
#1 China 26

Patent filings per year

Chart showing SMIC SHANGHAIs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Xu Dan 2
#2 Yu Dali 2
#3 Zhang Haiyang 2
#4 Wang Dingchong 2
#5 Xiao Fangyuan 1
#6 Zhang Shuyu 1
#7 Lin Decheng Liu 1
#8 Chen Guoqing Ning 1
#9 Feng Chen 1
#10 Huang Zhengtai 1

Latest patents

Publication Filing date Title
CN107516658A A kind of semiconductor devices and its manufacture method and electronic installation
CN107516646A The forming method of semiconductor devices
CN107516635A Fin formula field effect transistor and forming method thereof
CN107516674A The forming method of fin formula field effect transistor
CN107516649A Semiconductor device and its manufacture method
CN107515328A The detection circuit and detection method of voltage generating unit
CN107516631A The forming method of semiconductor devices
CN101008998A Part management system
CN1991346A The disposal route that is used for the sample of Auger electron spectroscopy in the integrated circuit manufacturing
CN1992254A Improved semiconductor wafer structure and its producing method
CN1940732A Remove the technology of photoetching film
CN1932719A Be used for providing the System and method for of adaptive power supply to SOC (system on a chip)
CN1734739A Method for manufacturing capacitor
CN1670923A The end-point detection method of the chemico-mechanical polishing of integrated circuit (IC)-components
CN1614754A Forming method of silicon oxynitride
CN1604308A Method for manufacturing DRAM crystal cell structure by utilizing oxidizing wire clearance walls and back etching
CN1601721A Forming method of oblique inlaid inner connection structure of integrated circuit
CN1531055A Integrated manufacturing process for stacked aluminium metal capacitor and inductor
CN1525535A Method and apparatus for wafer drying
CN1521845A Electrostatic discharge protection circuit