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SHANGHAI SIMGUI TECHNOLOGY CO

Overview
  • Total Patents
    115
  • GoodIP Patent Rank
    143,411
About

SHANGHAI SIMGUI TECHNOLOGY CO has a total of 115 patent applications. Its first patent ever was published in 2004. It filed its patents most often in China, WIPO (World Intellectual Property Organization) and EPO (European Patent Office). Its main competitors in its focus markets semiconductors, environmental technology and measurement are TOMITA KAZUO, CONSORTIUM ADVANCED SEMICONDUCTOR MATERIALS & RELATED TECHNOLOGIES and ZHEJIANG JIMAIKE MICROELECTRONIC CO LTD.

Patent filings in countries

World map showing SHANGHAI SIMGUI TECHNOLOGY COs patent filings in countries

Patent filings per year

Chart showing SHANGHAI SIMGUI TECHNOLOGY COs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Wei Xing 44
#2 Xi Wang 33
#3 Xing Wei 31
#4 Di Zengfeng 22
#5 Fang Ziwei 22
#6 Miao Zhang 22
#7 Zhang Feng 19
#8 Ye Fei 18
#9 Cao Gongbai 16
#10 Chenglu Lin 16

Latest patents

Publication Filing date Title
CN105226067A With the substrate and preparation method thereof of charge trap and insulating buried layer
CN105261586A Preparation method for substrate with charge traps and insulation buried layer
CN105140107A Preparation method for substrate with charge trap and insulation buried layer
CN105127890A Polishing head
CN105047699A Metal lamination layer for forming ohmic contact with nitride and manufacturing method thereof
CN105047695A High-resistance substrate for high-electron-mobility transistor and growing method thereof
CN105047692A Substrate for high-electron-mobility transistor
CN105039933A Tray for epitaxial growth
CN105047752A Surface modification method for silicon substrate
CN103762229A Transverse power device with composite grid media
CN103745989A HEMT (High Electron Mobility Transistor)
CN103762156A Manufacturing method of semiconductor substrate, semiconductor substrate and high-voltage transistor
CN103762237A Transverse power device with field plate structure
CN103745996A Lateral power device with partially insulated buried layer and manufacturing method
CN103762232A High-voltage transistor with insulation buried layer
CN103762228A Transverse power device with composite metal grid electrode structure
CN103745995A Transverse power device with super junction structure and manufacturing method thereof
CN103745998A Trench gate power FET (Field Effect Transistor)
CN103745999A Trench gate power field-effect transistor with insulated buried layer
CN103745997A High-voltage transistor with super-junction structure and production method thereof