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SHANGHAI LIANXING ELECTRONIC CO LTD

Overview
  • Total Patents
    38
  • GoodIP Patent Rank
    77,601
About

SHANGHAI LIANXING ELECTRONIC CO LTD has a total of 38 patent applications. Its first patent ever was published in 2012. It filed its patents most often in China. Its main competitors in its focus markets semiconductors, measurement and optics are UEHLING TRENT S, CHIPMOS TECHNOLOGIES LTD and STMICROELECTRONICS SDN BHD.

Patent filings in countries

World map showing SHANGHAI LIANXING ELECTRONIC CO LTDs patent filings in countries
# Country Total Patents
#1 China 38

Patent filings per year

Chart showing SHANGHAI LIANXING ELECTRONIC CO LTDs patent filings per year from 1900 to 2020

Focus industries

Top inventors

# Name Total Patents
#1 Zhu Yangjun 22
#2 Tian Xiaoli 19
#3 Lu Shuojin 16
#4 Du Huan 16
#5 Teng Yuan 12
#6 Zhang Wenliang 6
#7 Hu Aibin 6
#8 Li Ke 5
#9 Cong Mifang 5
#10 Wu Zhenxing 5

Latest patents

Publication Filing date Title
CN106711206A IGBT and manufacturing method thereof
CN106711205A IGBT and manufacturing method thereof
CN106711232A Fast recovery diode (FRD) and manufacturing method thereof
CN106711089A Production method of RB-IGBT chip and RB-IGBT chip
CN106711204A IGBT device and manufacturing method thereof
CN106711036A Reverse blocking IGBT (Insulated Gate Bipolar Transistor) chip and manufacturing method thereof
CN106711037A Fabrication method of RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip and RB-IGBT (Reverse Blocking Insulated Gate Bipolar Transistor) chip
CN106601799A Crimping-type IGBT device
CN104660186A Matched circuit determining method and load pulling system
CN104407181A Testing clamp
CN104241381A Radio frequency LDMOS device and preparing method thereof
CN104241377A Radio frequency LDMOS device and preparing method thereof
CN104269437A LDMOS device with double-layer shielding rings and manufacturing method of LDMOS device
CN104241380A Radio frequency LDMOS device and preparing method thereof
CN104241379A Radio frequency LDMOS device and preparing method thereof
CN104347724A LDMOS (Laterally Diffused Metal Oxide Semiconductor) device with shielding ring and preparation method thereof
CN103929183A D/A conversion circuit and D/A conversion method
CN103928460A Radio frequency laterally diffused metal oxide semiconductor layout structure
CN103915333A Pixel surface evenness implement method
CN104979378A Collector structure of semiconductor device and TI-IGBT (Triple Mode Integrate-Insulated Gate Bipolar Transistor)