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SHANGHAI ADVANCED SILICON TECHNOLOGY CO LTD

Overview
  • Total Patents
    16
  • GoodIP Patent Rank
    134,242
About

SHANGHAI ADVANCED SILICON TECHNOLOGY CO LTD has a total of 16 patent applications. Its first patent ever was published in 2012. It filed its patents most often in China. Its main competitors in its focus markets semiconductors and machine tools are KANG JOON MO, JEONG IN KWON and TOHO ENG KK.

Patent filings in countries

World map showing SHANGHAI ADVANCED SILICON TECHNOLOGY CO LTDs patent filings in countries
# Country Total Patents
#1 China 16

Patent filings per year

Chart showing SHANGHAI ADVANCED SILICON TECHNOLOGY CO LTDs patent filings per year from 1900 to 2020

Focus industries

Focus technologies

Top inventors

# Name Total Patents
#1 Chen Meng 16
#2 Song Hongwei 16
#3 Liu Pufeng 15
#4 Yamada Kenji 10
#5 Zhang Junbao 5
#6 Xiao Xingkui 4
#7 Li Qinlin 4
#8 Li Xianyuan 3
#9 Shen Siqing 3
#10 Chen Jie 3

Latest patents

Publication Filing date Title
CN105239158A Temperature field control technology of silicon melt liquid in growth of single crystal silicon of czochralski method
CN105239159A Design and preparation method of quartz crucible for growth of single crystal silicon of czochralski method
CN105239154A Czochralski method single-crystal silicon growth flow field control technology
CN105297140A Silicon chip and annealing treatment method
CN105239151A Material loading method of polycrystal silicon
CN105239150A Flow guide cylinder for monocrystal silicon growth furnace and application thereof
CN105239153A Single crystal furnace having auxiliary material adding mechanism and application thereof
CN105252406A Polishing method for silicon wafer
CN105262204A Monocrystal silicon growth partitioned uninterruptable and stable power supply technology
CN105280491A Silicon chip and preparing method
CN105316767A Silicon wafer for very large scale integrated circuit and manufacturing method and application thereof
CN103794467A Recycle method for thin silicon wafers
CN103730358A Method for producing transistor through silicon single crystal sheets
CN103849933A Method for growing Ce<3+> doped lutetium yttrium silicate scintillation crystal
CN104048583A Contact type thickness measuring device and method for sapphire substrates
CN103255478A Improvement on structure of crystal growing furnace for pulling alumina single crystal and method for growing alumina single crystal