| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 7 | |
| #2 | Taiwan | 6 | |
| #3 | United Kingdom | 4 | |
| #4 | United States | 4 | |
| #5 | WIPO (World Intellectual Property Organization) | 4 | |
| #6 | China | 2 | |
| #7 | Republic of Korea | 2 | |
| #8 | Germany | 1 | |
| #9 | Japan | 1 |
| # | Industry | |
|---|---|---|
| #1 | Semiconductors | |
| #2 | Surface technology and coating | |
| #3 | Machines | |
| #4 | Optics |
| # | Technology | |
|---|---|---|
| #1 | Semiconductor devices | |
| #2 | Single-crystal-growth | |
| #3 | Unspecified technologies | |
| #4 | Devices using light amplification | |
| #5 | Coating metallic material |
| # | Name | Total Patents |
|---|---|---|
| #1 | Wang Wang Nang | 26 |
| #2 | Nang Wang Wang | 2 |
| #3 | Wang Wangnang | 2 |
| #4 | Stepanov Sergey Igorevich | 1 |
| Publication | Filing date | Title |
|---|---|---|
| GB201318420D0 | Crack-free gallium nitride materials | |
| GB201210134D0 | Epitaxial growth of semiconductor material such as Gallium Nitride on oblique angled nano or micro-structures | |
| GB201018788D0 | High quality devices growth on pixelated patent templates | |
| GB201004512D0 | Production of semiconductor devices | |
| US2009159907A1 | Textured light emitting diodes | |
| US2008132040A1 | Deposition technique for producing high quality compound semiconductor materials |