|
US2012037983A1
|
|
Trench mosfet with integrated schottky rectifier in same cell
|
|
US2012037954A1
|
|
Equal Potential Ring Structures of Power Semiconductor with Trenched Contact
|
|
US2010308370A1
|
|
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up
|
|
US2009206395A1
|
|
Trench MOSFET with double epitaxial structure
|
|
US2008035988A1
|
|
Trenched MOSFET device with trenched contacts
|
|
TW200703643A
|
|
Gate contact and runners for high density trench mosfet
|
|
TW200713579A
|
|
Structure for avalanche improvement of ultra high density trench MOSFET
|
|
TW200711131A
|
|
High density trench MOSFET with low gate resistance and reduced source contact space
|
|
TW200711127A
|
|
Source contact and metal scheme for high density trench MOSFET
|
|
TW200711126A
|
|
High density hybrid MOSFET device
|
|
US2006255402A1
|
|
Elimination of gate oxide weak spot in deep trench
|
|
TW200531179A
|
|
Junction barrier schottky with low forward drop and improved reverse block voltage
|
