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KRONHOLZ STEPHAN

Overview
  • Total Patents
    48
About

KRONHOLZ STEPHAN has a total of 48 patent applications. Its first patent ever was published in 2009. It filed its patents most often in United States. Its main competitors in its focus markets semiconductors, computer technology and environmental technology are SCHEIPER THILO, YANG WEN-KUN and ASCATRON AB.

Patent filings in countries

World map showing KRONHOLZ STEPHANs patent filings in countries
# Country Total Patents
#1 United States 48

Patent filings per year

Chart showing KRONHOLZ STEPHANs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Kronholz Stephan 48
#2 Wiatr Maciej 11
#3 Beernink Gunda 9
#4 Papageorgiou Vassilios 8
#5 Javorka Peter 8
#6 Lenski Markus 8
#7 Boschke Roman 6
#8 Reichel Carsten 5
#9 Thees Hans-Juergen 5
#10 Trentzsch Martin 4

Latest patents

Publication Filing date Title
US2014057415A1 Methods of forming a layer of silicon on a layer of silicon/germanium
US8541281B1 Replacement gate process flow for highly scaled semiconductor devices
US2013221478A1 Methods of forming isolation structures for semiconductor devices by employing a spin-on glass material or a flowable oxide material
US2013214381A1 Methods of forming isolation structures for semiconductor devices
US2013214392A1 Methods of forming stepped isolation structures for semiconductor devices using a spacer technique
US2013210216A1 Epitaxial channel formation methods and structures
US2013105917A1 Methods of epitaxially forming materials on transistor devices
US2012025315A1 Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active Region
US2012282763A1 Process flow to reduce hole defects in P-active regions and to reduce across-wafer threshold voltage scatter
US2012267683A1 Early embedded silicon germanium with insitu boron doping and oxide/nitride proximity spacer
US2012153350A1 Semiconductor devices and methods for fabricating the same
US2010221883A1 Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process