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UNITY SEMICONDUCTOR CORP

Overview
  • Total Patents
    241
  • GoodIP Patent Rank
    23,610
  • Filing trend
    0.0%
About

UNITY SEMICONDUCTOR CORP has a total of 241 patent applications. It increased the IP activity by 0.0%. Its first patent ever was published in 2002. It filed its patents most often in United States, EPO (European Patent Office) and China. Its main competitors in its focus markets computer technology, semiconductors and basic communication technologies are KONO FUMIHIRO, SAIFUN SEMICONDUCTORS LTD and QIMONDA FLASH GMBH.

Patent filings per year

Chart showing UNITY SEMICONDUCTOR CORPs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 Rinerson Darrell 97
#2 Norman Robert 66
#3 Chevallier Christophe J 62
#4 Chevallier Christophe 57
#5 Siau Chang Hua 55
#6 Longcor Steven W 53
#7 Kinney Wayne 48
#8 Ward Edmond R 32
#9 Hsia Steve Kuo-Ren 29
#10 Schloss Lawrence 22

Latest patents

Publication Filing date Title
US2019279712A1 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US2017033158A1 Vertical cross-point memory arrays
US2015097155A1 Vertical cross point arrays for ultra high density memory applications
US2015132917A1 Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
US2015014760A1 Vertical gate NAND memory devices
US2014334222A1 Low read current architecture for memory
US2014231741A1 Planar resistive memory integration
US2014140122A1 Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
US2014009998A1 Conductive metal oxide structures in non volatile re-writable memory devices
US2013294136A1 Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US2013135920A1 Access signal adjustment circuits and methods for memory cells in a cross-point array
US2012315503A1 Immersion platinum plating solution
US2013043452A1 Structures And Methods For Facilitating Enhanced Cycling Endurance Of Memory Accesses To Re-Writable Non Volatile Two Terminal Memory Elements
US2011188283A1 Circuits and techniques to compensate data signals for variations of parameters affecting memory cells in cross-point arrays
US7832090B1 Method of making a planar electrode
US2010159641A1 Memory cell formation using ion implant isolated conductive metal oxide
US2010161888A1 Data storage system with non-volatile memory using both page write and block program and block erase
US2010157658A1 Conductive metal oxide structures in non-volatile re-writable memory devices
US2010161308A1 Multi-structured memory
US2010157670A1 High voltage switching circuitry for a cross-point array