| # | Country | Total Patents | |
|---|---|---|---|
| #1 | EPO (European Patent Office) | 4 | |
| #2 | Republic of Korea | 3 | |
| #3 | WIPO (World Intellectual Property Organization) | 3 | |
| #4 | China | 2 | |
| #5 | Taiwan | 1 | |
| #6 | United States | 1 |
| # | Industry | |
|---|---|---|
| #1 | Measurement | |
| #2 | Semiconductors | |
| #3 | Electrical machinery and energy | |
| #4 | Engines, pumps and turbines |
| # | Technology | |
|---|---|---|
| #1 | Analysing materials | |
| #2 | Semiconductor devices | |
| #3 | Measuring length, angles and areas | |
| #4 | Electric discharge tubes | |
| #5 | Scanning-probe techniques | |
| #6 | X-ray microscopes |
| # | Name | Total Patents |
|---|---|---|
| #1 | Reed David A | 8 |
| #2 | Smedt Rodney | 7 |
| #3 | Schueler Bruno W | 7 |
| #4 | Pois Heath A | 6 |
| #5 | Lee Wei Ti | 6 |
| #6 | Klare Mark | 4 |
| #7 | Larson Charles Thomas | 2 |
| #8 | Kwan Michael C | 2 |
| #9 | Bot Lawrence V | 2 |
| #10 | Fanton Jeffrey Thomas | 2 |
| Publication | Filing date | Title |
|---|---|---|
| WO2017079322A1 | Method and system for non-destructive metrology of thin layers | |
| CN107438891A | For the semiconductor metering using SIMS and the system and method for surface analysis | |
| KR20190128249A | System and method for characterizing a film by x-ray photoelectron and low-energy x-ray fluorescence spectroscopy |