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QIDONG JILAI ELECTRONICS CO LTD

Overview
  • Total Patents
    19
  • GoodIP Patent Rank
    193,942
  • Filing trend
    ⇩ 66.0%
About

QIDONG JILAI ELECTRONICS CO LTD has a total of 19 patent applications. It decreased the IP activity by 66.0%. Its first patent ever was published in 2010. It filed its patents most often in China. Its main competitors in its focus markets semiconductors are MEGAMOS CORP, QINGDAO WEILI ELECTRONIC SCIENCE & TECHNOLOGY CO LTD and PANASONIC ELECTRIC WORKS TATSU.

Patent filings in countries

World map showing QIDONG JILAI ELECTRONICS CO LTDs patent filings in countries
# Country Total Patents
#1 China 19

Patent filings per year

Chart showing QIDONG JILAI ELECTRONICS CO LTDs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Zhou Jian 11
#2 Geng Kaiyuan 9
#3 Kaiyuan Geng 5
#4 Jian Zhou 5
#5 Liu Zonghe 5
#6 Zhang Peng 5
#7 Li Jianxin 5
#8 Fayang Zhu 5
#9 Zhu Fayang 4
#10 Wang Siyu 3

Latest patents

Publication Filing date Title
CN110649017A Bidirectional ESD protection device
CN108831921A A kind of synchronous diffusion technique mesa structure thyristor chip of gallium boron and its manufacture craft
CN107658296A A kind of thyristor surge suppressor that there are three tunnels to protect and its manufacture method
CN107845631A A kind of high EB bipolar semiconductors protection device and its manufacture method
CN107644905A A kind of high voltage planar thyristor device and preparation method thereof
CN103730465A Linear constant-current device and manufacturing method of linear constant-current device
CN103730488A Silicon controlled punchthrough structure formed by cutting grooves and method thereof
CN103730534A Novel high-voltage bidirectional triggering device and manufacturing method of novel high-voltage bidirectional triggering device
CN103730487A Controllable silicon table top structure for improving forward direction voltage withstanding and manufacturing technology of controllable silicon table top structure for improving forward direction voltage withstanding
CN103730430A Multilayer composite membrane passivation structure of table top high-power semiconductor device and manufacturing technology of multilayer composite membrane passivation structure of table top high-power semiconductor device
CN102790083A Improved silicon-controlled structure and production process thereof
CN102789981A Production process of silicon-controlled rectifier
CN102789980A Production process of short base region structure for improving voltage
CN102157552A Thyristor structure with enhanced reliability and production method thereof
CN102157547A Short base region structure for improving high voltage and large current tolerance of thyristor and production method thereof
CN101901764A Process method for improving switching parameters of silicon controlled rectifier
CN101901763A Production technology of controllable silicon
CN101901832A Controlled silicon punchthrough structure formed by gallium diffusion and production method thereof
CN101901833A Monodirectional silicon controlled rectifier structure for improving switching speed and production method thereof