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NII PULSAR

Overview
  • Total Patents
    32
About

NII PULSAR has a total of 32 patent applications. Its first patent ever was published in 1983. It filed its patents most often in Russian Federation and USSR (Union of Socialist Soviet Republics). Its main competitors in its focus markets semiconductors are Suzhou riyuexin semiconductor co ltd, SHANGHAI CHANGFENG SMART CARD CO LTD and HITACHI CABLE FILM DEVICE LTD.

Patent filings in countries

World map showing NII PULSARs patent filings in countries

Patent filings per year

Chart showing NII PULSARs patent filings per year from 1900 to 2020

Focus industries

# Industry
#1 Semiconductors

Focus technologies

# Technology
#1 Semiconductor devices

Top inventors

# Name Total Patents
#1 Sejdman L A 3
#2 Dobudko Valentin D 3
#3 Rogov V V 3
#4 Evgrafova Galina A 3
#5 Shubin A E 2
#6 Savushkin Yurij A 2
#7 Rusak T F 2
#8 Puchkov Vladimir V 2
#9 Komkova G G 2
#10 Zakharov A A 2

Latest patents

Publication Filing date Title
RU2071145C1 Process for manufacture of thin monocrysralline semiconductor layers on insulator or other semiconductor material
RU2060822C1 Method and filtering column for sorbent cleaning in filtering column
RU2023331C1 Charge-coupled device
RU2033657C1 Device for low-temperature direct connection of semiconductor plates
RU2035281C1 Method of connection of leads to bonding pads and device for its accomplishment
RU2033659C1 Process of attachment of crystals of silicon discrete semiconductor devices and integrated circuits to case
RU2008272C1 Method of carrying out ion exchange
RU2036071C1 Polishing wheel
RU2006286C1 Method for purifying synthetic ion-exchange material
RU2008743C1 Method of manufacture of semiconductor crystal
RU1831731C Method of manufacture of field-effect transistors on the base of gallium arsenide
RU1808147C Method of manufacture of monolithic integrated circuits
SU1744684A1 Method for focusing optical microscope during multiple checking of relief microstructure
RU2068601C1 Housing-free integral circuit
RU1820783C Method for producing epitaxial gallium arsenide layers
RU1771335C Method for producing epitaxial structures in the basis of gallium arsenide
RU1757400C Method of manufacturing charge coupled device with virtual phase
RU2016915C1 Liquid for etching of refractory metals
RU1639341C Method of flaw detection on silicon surface
RU1575829C Process of formation of linear submicron structures in semiconductor and dielectric plates