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PROGRESSANT TECHNOLOGIES INC

Overview
  • Total Patents
    67
About

PROGRESSANT TECHNOLOGIES INC has a total of 67 patent applications. Its first patent ever was published in 2000. It filed its patents most often in United States, Australia and China. Its main competitors in its focus markets computer technology, semiconductors and micro-structure and nano-technology are WALKER ANDREW J, KREUPL FRANZ and LOJEK BOHUMIL.

Patent filings per year

Chart showing PROGRESSANT TECHNOLOGIES INCs patent filings per year from 1900 to 2020

Top inventors

# Name Total Patents
#1 King Tsu-Jae 55
#2 Tsu-Jae King 10
#3 Liu David K Y 9
#4 King Tsu Jae 2
#5 David K Yliu 1
#6 David K Y Liu 1
#7 Liu David K 1

Latest patents

Publication Filing date Title
US2006028881A1 Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US2006007773A1 Negative differential resistance (NDR) elements and memory device using the same
US6956262B1 Charge trapping pull up element
US7005711B2 N-channel pull-up element and logic circuit
US6806117B2 Methods of testing/stressing a charge trapping device
US7012833B2 Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6812084B2 Adaptive negative differential resistance device
US6979580B2 Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6980467B2 Method of forming a negative differential resistance device
US6849483B2 Charge trapping device and method of forming the same
US6724024B1 Field effect transistor pull-up/load element
US6864104B2 Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 Enhanced read and write methods for negative differential resistance (NDR) based memory device
US6567292B1 Negative differential resistance (NDR) element and memory with reduced soft error rate
US6518589B2 Dual mode FET & logic circuit having negative differential resistance mode
US6724655B2 Memory cell using negative differential resistance field effect transistors
US6754104B2 Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
US6479862B1 Charge trapping device and method for implementing a transistor having a negative differential resistance mode
US6512274B1 CMOS-process compatible, tunable NDR (negative differential resistance) device and method of operating same